Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Dr. Huili (Grace) Xing 

Our research projects involve growth, fabrication and characterization of semiconductor electronic and optical materials and devices, primarily III-V nitride semiconductors, 2D crystals, steep transistors, and more recently Ga2O3, multiferroics and magnetic materials.

Latest News

Congratulations to Shyam and Wenshen for winning a Best Student Paper and a Honorable Mention! 

http://www.ece.cornell.edu/news/index.cfm?news_id=96616

Zongyang and the power team report the first kV Ga2O3 E-mode transistors!
High-voltage gallium oxide transistors with more than 1kV breakdown: http://www.semiconductor-today.com/news_items/2018/may/cornell_160518.shtml

Re-imagining Computer System Memories: Prof. Xing is leading an interdisciplinary team spanning materials, devices, circuits, and architectures to realize a memory and paradigm shift in memory-processing architecture. https://research.cornell.edu/research/re-imagining-computer-system-memories

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

[J-196] Wenshen Li, Kazuki Nomoto, Manyam Pilla, Ming Pan, Xiang Gao, Debdeep Jena, Huili Grace Xing
Development of GaN vertical trench MOSFET with MBE regrown channel
IEEE Trans. Electron Dev. 65(6) (2018).  DOI: 10.1109/TED.2018.2829125

[J-195] Zongyang Hu, Kazuki Nomoto, Wenshen Li, Nicholas Tanen, Kohei Sasaki, Akito Kurmata, Tohru Nakamura, Debdeep Jena and Huili Grace Xing
Enhancement-mode Ga2O3 vertical transistors with breakdown voltage >1 kV.
IEEE Electron Dev. Lett.,  (2018). DOI: 10.1109/LED.2018.2830184
Featured by Semiconductor Today (link)

[J-194]  Jimy Encomendero, Rusen Yan, Amit Verma, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Patrick Fay, Debdeep Jena and Huili Grace Xing
Room temperature microwave oscillations in GaN/AlN resonant tunneling didoes with peak current densities up to 220 kA/cm2
Appl. Phys. Lett. 112, 103101 (2018) DOI: 10.1063/1.5016414
Editor’s Pick
Cover Image of APL

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