Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Dr. Huili (Grace) Xing 

Our research projects involve growth, fabrication and characterization of semiconductor electronic and optical materials and devices, primarily III-V nitride semiconductors, 2D crystals, steep transistors, and more recently Ga2O3, multiferroics and magnetic materials.

Position Opening: Research Associate

Latest News

Congrats to Kevin and all co-authors who contributed to the buried tunnel junction project!

Prof. Jena and Prof. Xing elected endowed chairs. Congrats!
https://www.ece.cornell.edu/news/jena-xing-and-zhao-elected-endowed-chairs

Reverse-biased Schottky barrier diodes often suffer from high leakage current due to field-enhanced thermionic emission. Check out how Wenshen reduces the electric field at the metal-Ga2O3 junction to achieve extremely low leakage current at kV.
https://aip.scitation.org/doi/abs/10.1063/1.5052368

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

[J-202] Wenshen Li, Zongyang Hu, Kazuki Nomoto, Zexuan Zhang, Jui-Yuan Hsu, Thieu Quang Tu, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing
1230 V beta-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 uA/cm2
Appl. Phys. Lett., 113, 202101 (2018); https://doi.org/10.1063/1.5052368
Editor's Pick

[J-201] Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto, Austin Hickman, Zhen Chen, Han-Hui Then, David A. Muller, Huili Grace Xing and Debdeep Jena
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas.
IEEE Electron Device Letters, (2018) doi:10.1109/LED.2018.2874190

[J-200] Elena Fabris, Matteo Meneghini, Carlo  De Santi, Zongyang  Hu, Wenshen  Li, Kazuki Nomoto, Xiang  Gao, Debdeep Jena, Huili G Xing, Enrico Zanoni, Gaudenzio Meneghesso 
Degradation of GaN-on-GaN vertical diodes submitted to high current stress 
Microelectronics Reliability 88-90, 568-571 (2018) doi.org/10.1016/j.microrel.2018.06.041

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