Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Professor Huili (Grace) Xing 

Our research projects involve growth, fabrication and characterization of semiconductor electronic and optical materials and devices, primarily III-V nitride semiconductors, 2D crystals, steep transistors, and more recently Ga2O3, multiferroics and magnetic materials.

Latest News

 Jonathan McCandless has won the NSF Graduate Research Fellowship!

 Ryan Page has won the MSE TA Award of 2019!

 Shuyao Chen has won the ECE Best Poster Award of 2019!

 

Wenshen writes a feature article on Ga2O3 for Compound Semiconductor.

https://compoundsemiconductor.net/article/106964/Unleashing_the_promise_of_gallium_oxide/feature

 

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

[J-208] Reet Chaudhuri, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing and Debdeep Jena
A Polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Submitted.

[J-207] Shyam Bharadwaj, S.M. Islam, Kazuki Nomoto, Vladimir Protasenko, Alex Chaney, Huili Grace Xing and Debdeep Jena
Bandgap narrowing and Mott transition in Si-doped Al0.7GaN
Appl. Phys. Lett., 114, 113501 (2019); https://doi.org/10.1063/1.5086052

[J-206] Jimy Encomendero, Vladimir Protasenko, Berardi Sensale-Rodriguez, Patrick Fay, Farhan Rana, Debdeep Jena and Huili Grace Xing
Broken symmetry effects due to polarization on resonant tunneling in Nitride semiconductor double-barrier heterostructures
Physical Review Applied 11, 034032 (2019) https://doi.org/10.1103/PHYSREVAPPLIED.11.034032
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