Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Dr. Huili (Grace) Xing 

Our group research can be loosely grouped into three areas: GaN electronic and optoelectronics, steep transistors, and 2-D crystals. The semiconductors we work with include GaN, convential III-Vs, Si, graphene and other 2D crystals. 

Latest News

      Congratulations to Wenshen and the team for their paper, Gallium nitride vertical junction barrier Schottky diodes, being featured by Semiconductor Today!

      "Cornell University, Qorvo Inc and IQE RF LLC in the USA have reported on work on vertical junction barrier Schottky diodes (JBSDs) produced on free-standing gallium nitride (GaN) [Wenshen Li, et al, IEEE Transactions on Electron Devices, published online 21 February 2017]. The aim was to combine the good characteristics of Schottky barrier diodes and pn diodes (PNDs) for power applications." Read more here.

Congratulations to Meng and the team for their paper, Bulk aluminium nitride platform for gallium nitride high voltage and power, being featured by Semiconductor Today!
Find the article here.

 

Check out the paper that was presented at IEDM 2016 here.

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

(J-179) Wenshen Li, Kazuki Nomoto, Manyam Pilla, Ming Pan, Xiang Gao, Debdeep Jena, Huili Grace Xing.
Design and realization of GaN trench junction-barrier-Schottky-diodes (trench JBSD).
Online in TED. (2017). DOI: 10.1109/TED.2017.2662702

(J-178) Cheng Liu, Yu Kee Ooi, S.M. Islam, Jai Verma, Huili Grace Xing, Debdeep Jena, and Jing Zhang.
Physics and polarization characterization of 298 nm AIN-delta-GaN quantum-well ultraviolet light-emitting diodes. To appear in Appl. Phys. Lett. (2017)

(J-177) Liheng Zhang, Amit Verma, Huili Grace Xing and Debdeep Jena
J. J. Appl. Phys. 56, 030304 (2017). https://doi.org/10.7567/JJAP.56.030304
 
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