Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Dr. Huili (Grace) Xing 

Our group research can be loosely grouped into three areas: GaN electronic and optoelectronics, steep transistors, and 2-D crystals. The semiconductors we work with include GaN, convential III-Vs, Si, graphene and other 2D crystals. 

Latest News

- Wenshen Li et al. "600 V GaN vertical V-trench MOSFET with MBE regrown channel”, the first high breakdown vertical GaN transistor using MBE grown device active layers."
- Zongyang Hu et al. "GaN vertical nanowire and fin power MISFETs”, the first vertical NW GaN FETs with high breakdown."
- Zongyang Hu et al. "Vertical fin Ga2O3 field-effect transistors with on/off ratio >109”, the first vertical Ga2O3 transistor with high breakdown."
- Kazuki Nomoto et al. "Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature”, the first Mg-doped GaN p-MISFETs."

Congratulations to Zongyang Hu and the Power team!
Claiming the highest breakdown voltage so far for regrown vertical GaN p-n diodes [Zongyang Hu et al, IEEE Electron Device Letters, published online 29 June 2017].
“This is the first high-voltage vertical regrown p-n junction ever reported in the GaN system,” http://www.semiconductor-today.com/news_items/2017/jul/cornell_190717.shtml

Congrats to Yongjin Cho on having hiswork covered by Semiconductor Today!

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

(J-185) Jun Hong Park, Suresh Vishwanath, Steve Wolf, Kehao Zhang, Iljo Kawk, Mary Edmonds, Michael Breeden, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna, Joshua A. Robinson, Huili Grace Xing and Andrew C. Kummel
Selective chemical response of transition metal dichalcogenides and metal dischalcogenides in ambient conditions
ACS Appl. Mater. & Interfaces, (2017) DOI: 10.1021/acsami.7b08244

(J-184) H. Condori Quispe, S.M. Islam, S. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. G. Xing, D. Jena and B. Sensale-Rodriguez
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells.
Appl. Phys. Lett. 111, 073102 (2017), doi: 10.1063/1.4996925

(J-183) Zongyang Hu, Kazuki Nomoto, Meng Qi, Wenshen Li, Mingda Zhu, Xiang Gao, Debdeep Jena and Huili Grace Xing
1.1 kV vertical GaN p-n diodes with p-GaN regrown by molecular beam epitaxy.
IEEE Electron Dev. Lett., 38(8), 1071-1074 (2017). DOI: 10.1109/LED.2017.2720747
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