Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Professor Huili (Grace) Xing 

Our research projects involve growth, fabrication and characterization of semiconductor electronic and optical materials and devices, primarily III-V nitride semiconductors, 2D crystals, Ga2O3, and more recently, multiferroics and magnetic materials.

Latest News

Prof. Xing is elected as a Fellow of the American Physical Society.

https://news.cornell.edu/stories/2019/09/three-faculty-elected-fellows-a...

Reet and Sam report the first hole doping arising from symmetry breaking in GaN/AlN without impurity dopants. This phenomenon was first predicted by Cornell researchers about 20 years ago. The hunt for this hole gas is finally over; more fundamental physics and applications await!

News Release at Cornell: https://news.cornell.edu/stories/2019/09/discovery-gallium-nitride-key-enabler-energy-efficient-electronics

Publication online: https://science.sciencemag.org/content/365/6460/1454

Henryk’s work on buried tunnel junction - conceived and demonstrated for the first time.

http://www.semiconductor-today.com/news_items/2019/jun/cornell-140619.shtml

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

[J-233] Reet Chaudhuri, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing and Debdeep Jena, A Polarization-induced 2D hole gas in undoped gallium nitride quantum wells, Science, 365, 6460 pp. 1454-1457. (2019). DOI: 10.1126/science.aau8623.Cornell News Release, http://news.cornell.edu/stories/2019/09/discovery-gallium-nitride-key-en...">http://news.cornell.edu/stories/2019/09/discovery-gallium-nitride-key-en...

[J-232] K. Shinohara, C. King, E. J. Regan, M. P. Gomeza, J. Bergman, A. D. Carter,  A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, M. Islam, H. Xing, D. Jena, GaN-based multiple 2DEG channel BRIDGE (Buried Dual GatE) HEMT technology for high power and linearity,  ECS Trans., 92(4) 103-108 (2019) 10.1149/09204.0103ecst

[J-231] Elena Fabris, Carlo De Santi, Alessandro Caria, Kazuki Nomoto, Zongyang  Hu, Wenshen  Li, Xiang Gao, Debdeep Jena, Huili Grace Xing, Breakdown walkout in polarization-doped vertical GaN diodes, EEE Trans. Electron Dev. 66(11), 4597 (2019) 10.1109/TED.2019.2943014

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