Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Professor Huili (Grace) Xing 

Our research projects involve growth, fabrication and characterization of semiconductor electronic and optical materials and devices, primarily III-V nitride semiconductors, 2D crystals, steep transistors, and more recently Ga2O3, multiferroics and magnetic materials.

Position Opening: Research Associate

Latest News

Sam Bader reports record performance hole-conducting FETs in GaN!
Featured by Semiconductor Today: Increasing current performance in III-nitride p-channel transistors

Okan’s recent work (Rana group) is featured by Scilight: how defects in Ga2O3 potential impact breakdown of the material.
Role of defect states in high bandgap gallium oxide identified using two-color spectroscopy

 

At IEDM 2018, Wenshen presented his record-performing Ga2O3 trench JBSDs, and our collaborators at Padova presented detailed avalanche behavior of GaN p-n diodes that are doped by polarization-induced bulk doping for the first time, designed and fabricated by Kazuki and Zongyang!

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

[J-203] Okan Koksal, Nicholas Tanen, Debdeep Jena, Huili Grace Xing and Farhan Rana
Measurement of ultrafast dynamics of photoexcited carriers in beta-Ga2O3 by two-color optical pump-probe spectroscopy
Applied Physics Letters 113, 252102 (2018). doi: 10.1063/1.5058164
Featured by AIP Scilight

[J-202] Wenshen Li, Zongyang Hu, Kazuki Nomoto, Zexuan Zhang, Jui-Yuan Hsu, Thieu Quang Tu, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing
1230 V beta-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 uA/cm2
Appl. Phys. Lett., 113, 202101 (2018); https://doi.org/10.1063/1.5052368
Editor's Pick
Featured by Semiconductor Today

[J-201] Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto, Austin Hickman, Zhen Chen, Han-Hui Then, David A. Muller, Huili Grace Xing and Debdeep Jena
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas.
IEEE Electron Device Letters, (2018) doi:10.1109/LED.2018.2874190
Featured by Semiconductor Today

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