Welcome to the Xing Group

Dr. Huili (Grace) XingPrincipal Investigator
Professor Huili (Grace) Xing 

Our research projects involve growth, fabrication and characterization of semiconductor electronic and optical materials and devices, primarily III-V nitride semiconductors, 2D crystals, steep transistors, and more recently Ga2O3, multiferroics and magnetic materials.

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  • GaN Quantum-Well & Quantum-Dot DUV LEDs
  • GaN HEMTs with 370 GHz ft
    GaN HEMTs with 370 GHz ft
  • Rama mapping of single layer graphene labeled with isotopes during CVD growth
    Rama mapping of single layer graphene labeled with isotopes during CVD growth
  • THz modulators based on graphene
    THz modulators based on graphene
  • Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
    Tunnel FETs with electrons tunneling from quasi-3D to gated 2D DOS
  • Xing Group shot
    Group photo with Dr. Jena's group in 2012 summer
  • Nanowire aligned by DEP for polarization sensitive photodetectors
    Nanowire aligned by DEP for polarization sensitive photodetectors

Latest Publications

[J-213] Austin Hickman, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Kevin Lee, Huili Grace Xing, and Debdeep Jena, High breakdown voltage in strained AlN/GaN/AlN quantum well HEMTs, IEEE Electron Dev. Lett. 40(8), 1293 (2019)  10.1109/LED.2019.2923085, Featured by Semiconductor Today, http://www.semiconductor-today.com/news_items/2019/jul/cornell-110719.shtml

[J-212] Muhammad M. Rahman, Anand B. Puthirath, Aparna Adumbumkulath, Thierry Tsafack, Hossein Robatjazi, Morgan Barnes, Zixing Wang, Sampath Kommandur,Sandhya Susarla, Seyed Mohammad Sajadi, Devashish Salpekar, Fanshu Yuan,Ganguli Babu, Kazuki Nomoto, S. M. Islam, Rafael Verduzco, Shannon K. Yee, Huili G. Xing, and Pulickel M. Ajayan, Fiber Reinforced Layered Dielectric Nanocomposite, Advanced Functional Materials, 1900056 (2019); https://doi.org/10.1002/adfm.201900056

[J-211] Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing,  Fin-channel orientation dependence in kV-class Ga2O3 trench Schottky barrier diodes, Appl. Phys. Express, 12, 061007 (2019) https://doi.org/10.7567/1882-0786/ab206c, Featured as Spotlights

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