Congratulations to Liheng Zhang for winning Best MS paper award of MSE 2017! Liheng is going to pursue a PhD this fall at Yale!
Congratulations to Yuxin Ji for winning Best MEng poster overall of ECE 2017!
Congratulations to Wenshen and the team for their paper, Gallium nitride vertical junction barrier Schottky diodes, being featured by Semiconductor Today!
"Cornell University, Qorvo Inc and IQE RF LLC in the USA have reported on work on vertical junction barrier Schottky diodes (JBSDs) produced on free-standing gallium nitride (GaN) [Wenshen Li, et al, IEEE Transactions on Electron Devices, published online 21 February 2017]. The aim was to combine the good characteristics of Schottky barrier diodes and pn diodes (PNDs) for power applications." Read more here.
Kazuki presented 3.4 kV GaN rectifiers at IEDM