Congratulations to Kevin Lee for winning a Young Scientist Award at the International Workshop on UV Materials and Devices 2017!
- Wenshen Li et al. "600 V GaN vertical V-trench MOSFET with MBE regrown channel”, the first high breakdown vertical GaN transistor using MBE grown device active layers."
- Zongyang Hu et al. "GaN vertical nanowire and fin power MISFETs”, the first vertical NW GaN FETs with high breakdown."
- Zongyang Hu et al. "Vertical fin Ga2O3 field-effect transistors with on/off ratio >109”, the first vertical Ga2O3 transistor with high breakdown."
- Kazuki Nomoto et al. "Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature”, the first Mg-doped GaN p-MISFETs."
Congratulations to Zongyang Hu and the Power team!
Claiming the highest breakdown voltage so far for regrown vertical GaN p-n diodes [Zongyang Hu et al, IEEE Electron Device Letters, published online 29 June 2017].
“This is the first high-voltage vertical regrown p-n junction ever reported in the GaN system,” http://www.semiconductor-today.com/news_items/2017/jul/cornell_190717.shtml
Congratulations to Liheng Zhang for winning Best MS paper award of MSE 2017! Liheng is going to pursue a PhD this fall at Yale!
Congratulations to Yuxin Ji for winning Best MEng poster overall of ECE 2017!
Congratulations to Wenshen and the team for their paper, Gallium nitride vertical junction barrier Schottky diodes, being featured by Semiconductor Today!
"Cornell University, Qorvo Inc and IQE RF LLC in the USA have reported on work on vertical junction barrier Schottky diodes (JBSDs) produced on free-standing gallium nitride (GaN) [Wenshen Li, et al, IEEE Transactions on Electron Devices, published online 21 February 2017]. The aim was to combine the good characteristics of Schottky barrier diodes and pn diodes (PNDs) for power applications." Read more here.