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A state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets show a GaN p-n diode fabricated on a high-quality bulk GaN substrate and light emission from the junction under forward bias.  CREDIT: Zongyang Hu
Work by Zongyang Hu highlighted!

Highlighted by Applied Physics Letters, Zongyang Hu's work on Building blocks for GaN power switches can be found here:
https://www.aip.org/publishing/journal-highlights/building-blocks-gan-power-switches

Congrats to Bo!

11/2015: Bo's recent work together with IQE is featured on line.
Reducing current leakage in aluminium gallium nitride transistors on silicon

Mingda Zhu's work featured

03/2015: Mingda Zhu's work on GaN kV diodes has been featured by Semiconductor-Today.
http://www.semiconductor-today.com/news_items/2015/mar/und_250315.shtml

Rusen receives award

02/2015: Rusen received the 2014 NIST Uncertainty Analysis Student Award at EMC. 
http://www.mrs.org/57th-emc-student-award-winners/

"ohmic contacts to layered crystals"

12/2014: Profs. Debdeep Jena and Grace Xing wrote a Nature view article on ohmic contacts to layered crystals.
http://www.nature.com/nmat/journal/v13/n12/full/nmat4121.html

Prof. Xing named

10/2014: Prof. Xing named a Richard E. Lunquist Sesquicentennial Faculty Fellow of ECE at Cornell University.

"taking the flat materials to new heights"

09/2014: Prof. Xing led a team to win the NSF EFRI-2DARE project. See NSF's announcement on "taking the flat materials to new heights".
http://www.nsf.gov/news/news_summ.jsp?org=NSF&cntn_id=132857&preview=false

Zongyang successfully defended his PhD dissertation. Congrats!

07/2014: Zongyang successfully defended his PhD dissertation. Congrats!

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