Austin focuses on the fabrication and characterization of III-Nitride semiconductor devices, specifically high-electron-mobility transistors. He received his BS in Electrical Engineering from the University of Notre Dame in 2016.
Hyunjea works on 2D materials-based devices and applications.
Jashan Singhal received the B.Tech. degree in electrical engineering and a minor in computer science from the Indian Institute of Technology (IIT), Bombay, India. While at IIT Bombay, he worked on III-V quantum dot heterostructures.
Jeff Miller earned his BS in electrical engineering from Penn State University, before immediately starting at Cornell in fall 2017. While at Penn State, he researched luminescent concentrators in the Applied Optoelectronics and Photonics Lab.
Jimy works on RTD-gated plasma-wave THz devices.
John works on advanced nitride materials.
Jon McCandless earned his BS in electrical engineering from Case Western Reserve. Before coming to Cornell he worked at the Air Force Research Laboratory where he focused on Ga2O3.
Joseph earned his B.S in Materials Science Engineering at the University of Michigan, Ann Arbor in 2016. As an undergraduate, Joseph worked primarily with inorganic semiconductors for thermoelectric and spintronic applications. His current research interests include thin film growth and characterization of novel nitride and oxide materials for use in semiconductor device structures and beyond.
Kevin currently is a PhD student in ECE at Cornell. Current primary research interests include deep UV LEDs, lasers and MBE growths. He received his B.A. and M.S. in EE and physics from National Tsing Hua university in Taiwan. For M.S. thesis, he was developing laser systems to generate ultra-cold atoms for low light level EIT experiments. Then he joined Academia Sinica as a R.A. after graduation and started working on 2D-materials, nano-lasers and direct 3D nanostructures writing. He likes playing table tennis and snowboarding.
Nicholas Tanen is a PhD student in the department of Materials Science and Engineering. He studies MBE growth of Ga2O3 and related ternaries as well as III-N's grown on Ga2O3 for use in power electronic and optoelectronic applications. Additionally, he studies electron transport in oxides using temperature dependent Hall measurements and scattering mechansim models.
Phillip received his BS in Physics and Mathematics from the University of Maryland - Baltimore County (UMBC). He works on the MBE growth and magnetotransport studies of materials with high spin-orbit coupling and/or low dimensionality, such as bismuth-containing III-V semiconductors, topological insulators, and 2D materials.
Reet studies the MBE growth and characterization of III-nitrides electronic devices for high power applications, focussing on AlN platform. He did his Bachelors from NIT Tiruchhirapalli (India) and Masters (Applied Physics) from Cornell. Outside the MBE lab, he also manages the group soccer team - TeamFET.
Before coming to Cornell, Ryan earned a B.S. in Applied Physics and a B.A. in Classics from Pacific Lutheran University in Tacoma, WA. His research focuses on the MBE growth and characterization of nitride materials, including hexagonal boron nitride as well as GaN/AlN heterostructures for novel electronic device applications.
Sam develops and models advanced III-Nitride heterostructures, with a focus on p-channel devices.
Shyam currently processes III-N LED devices and studies transport in AlGaN-based n- and p- doped thin films to optimize the UV LED cladding regions. His interests include increasing EQE in UV LED structures and developing deep UV lasers. He is from New Jersey and enjoys playing soccer and video games in his free time.
Wenshen works on advanced GaN devices.
Xiang researches GaN HEMTS with ferroelectric gate stack.
Zexuan Zhang graduated from Peking University in 2017 with a Bachelor's degree in microelectronics, where he worked on silicon device reliability. His current research interest at Cornell is on non-reciprocal wave propagation devices by fermionic emulation and exceptional point physics as well as reliability of advanced materials such as Ga2O3.