Publications

Journal Articles

  1. (J-189) Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, Wan Sik Wang, Ning Lu, Xin Peng, Huai-Hsun Lien, John Weisenberger, Stephen McDonnell, Moon Kim, Margaret Dobrowolska, Jacek K. Furdyna, Kyle Shen, Robert Wallace, Debdeep Jena, and Huili Grace Xing.
    MBE growth of 2H-MoTe2 and 1T'-MoTeon 3d substrates 
    To appear in J. Crystal Growth, (2017).
     

  2. (J-188) Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Berardi Sensale-Rodriguez, Patrick Fay, Debdeep Jena, and Huli Grace Xing.
    New tunneling features in polar III-nitride resonant tunneling diodes.
    Physics Review X (PRX), 7,041017 (2017). 
    DOI: 10.1103/PhysRevX.7.041017

  3. (J-187) Wencan Jin*, Suresh Vishwanath*, Jianpeng Liu, Lingyuan Kong, Rui Lou, Zhongwei Dai, Jerzy T. Sadowski, Xinyu Liu, Huai-Hsun Lien, Alexander Chaney, Yimo Han, Michael Cao, Junzhang Ma, Tian Qian, Shancai Wang, Malgorzata Dobrowolska, Jacek Furdyna, David A. Muller, Karsten Pohl, Hong Ding, Jerry I. Dadap, Huili Grace Xing, and Richard M. Osgood, Jr.
    Ultrahigh Fermi velocity in the survace state of epitaxial rock-salt SnSe topological crystalline insulator.
    Physics Review X (PRX), 7, 041020 (2017). *Equal contributions
    DOI: 10.1103/PhysRevX.7.041020

    Ultrahigh Fermi velocity in the surface state of epitaxial rock
    -
    salt SnSe topological
    crystalline insulator
    Ultrahigh Fermi velocity in the surface state of epitaxial rock
    -
    salt SnSe topological
    crystalline insulator
  4. (J-186) S.M. Islam, Vladimir Protasenko, Kevin Lee, Sergei Rouvimov, Jai Verma, Huili Grace Xing, and Debdeep Jena
    Deep-UV emission at 219 nm from ultrathin MBE GaN/AIN quantum heterostructures
    Appl. Physl Lett. 111, 091104 (2017); doi: http://dx.doi.org/10.1063/1.5000844
    Featured by Semiconductor Today

  5. (J-185) Jun Hong Park, Suresh Vishwanath, Steve Wolf, Kehao Zhang, Iljo Kawk, Mary Edmonds, Michael Breeden, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna, Joshua A. Robinson, Huili Grace Xing and Andrew C. Kummel
    Selective chemical response of transition metal dichalcogenides and metal dischalcogenides in ambient conditions
    ACS Appl. Mater. & Interfaces, (2017) DOI: 10.1021/acsami.7b08244

  6. (J-184) H. Condori Quispe, S.M. Islam, S. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. G. Xing, D. Jena and B. Sensale-Rodriguez
    Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells.
    Appl. Phys. Lett. 111, 073102 (2017), doi: 10.1063/1.4996925

  7. (J-183) Zongyang Hu, Kazuki Nomoto, Meng Qi, Wenshen Li, Mingda Zhu, Xiang Gao, Debdeep Jena and Huili Grace Xing
    1.1 kV vertical GaN p-n diodes with p-GaN regrown by molecular beam epitaxy.
    IEEE Electron Dev. Lett., 38(8), 1071-1074 (2017). DOI: 10.1109/LED.2017.2720747
    Featured by Semiconductor Today

  8. (J-182) Yongjin Cho, Zongyang Hu, Kazuki Nomoto, Huili Grace Xing and Debdeep Jena
    Single crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy.
    Appl. Phys. Lett., 110, 253506 (2017). doi: 10.1063/1.4989581
    Featured by Applied Physics Letters, Editor’s Pick
    Featured by Semiconductor Today

  9. (J-181) Meng Qi, William A. O’Brien, Chad A. Stephenson, Victor Patel, Ning Cao, Brian J. Thibeault, Marco Schowalter, Andreas Rosenauer, Vladimir Protasenko, Huili Grace Xing and Mark A. Wistey
    Extended defect propagation in highly tensile strained Ge waveguides
    Crystals, 7, 157 (2017). doi:10.3390/cryst7060157

  10. (J-180) Mingda Zhu, Meng Qi, Kazuki Nomoto, Zongyang Hu, Bo Song, Ming Pan, Xiang Gao, Debdeep Jena and Huili Grace Xing 
    Electron mobility in polarization-doped Al0-0.2GaN with a concentration near 1017 cm-3 
    Appl. Phys. Lett. 110, 182102 (2017); doi: 10.1063/1.4982920.

  11. (J-179) Wenshen Li, Kazuki Nomoto, Manyam Pilla, Ming Pan, Xiang Gao, Debdeep Jena, Huili Grace Xing.
    Design and realization of GaN trench junction-barrier-Schottky-diodes (trench JBSD).
    Online in TED. (2017). DOI: 10.1109/TED.2017.2662702
    Featured by Semiconductor-Today

  12. (J-178) Cheng Liu, Yu Kee Ooi, S.M. Islam, Jai Verma, Huili Grace Xing, Debdeep Jena, and Jing Zhang.
    Physics and polarization characterization of 298 nm AIN-delta-GaN quantum-well ultraviolet light-emitting diodes. To appear in Appl. Phys. Lett. (2017)

  13. (J-177) Liheng Zhang, Amit Verma, Huili Grace Xing and Debdeep Jena
    J. J. Appl. Phys. 56, 030304 (2017). https://doi.org/10.7567/JJAP.56.030304
     
  14. (J-176) Meng Qi, Guowang Li, Satyaki Ganguly, Pei Zhao, Xiaodong Yan, Jai Verma, Bo Song, Mingda Zhu, Kazuki Nomoto, Huili Grace Xing and Debdeep Jena
    Appl Phys. Lett., 110, 063501 (2017). doi:10.1063/1.4975702
    Featured by Semiconductor-Today
     
  15. (J-175) S.M. Islam, Kevin Lee, Jai Verma, Vladimir Protasenko, Sergei Rouvimov, Shyam Bharadwaj, Huili Grace Xing and Debdeep Jena
    Appl. Phys. Lett. 110, 041108 (2017). DOI: 10.1063/1.4975068
     
  16. (J-174) Mingda (Oscar) Li, Ozan Irsoy, Claire Cardie, and Huili Grace Xing.
    Physics-inspired neural networks (Pi-NN) for efficient device compact modeling.
    IEEE J. of Exploratory Solid-State Computational Devices and Circuits (2016).

  17. (J-173) Nan Ma, Nicholas Tanen, Amit Verma, Zhi Guo, Tengfei Luo, Huili Grace Xing, and Debdeep Jena.
    Intrinsic electron mobility limits in b-Ga2O3
    Appl. Phys. Lett. 109, 212101 (2016). DOI: 10.1063/1.4968550

  18. (J-172) V. Kanzyuba, S. Dong, X. Li, T. Yoo, S. Rouvimov, S. Vishwanath, D. Jena, H.G. Xing, M. Dobrowolska, J.K. Furdyna. 
    Structural properties of (Sn,Mn)Se2 - a new 2D magnetic semiconductor with potential for spintronic applications.
    Journal of Microscopy and Microanalysis, 22, S3, 1512-1513 (2016).

  19. (J-171) Hugo Condori Quispe, Jimy J. Encomendero-Risco, Huili Grace Xing and Berardi Sensale-Rodriguez
    Appl. Phys. Lett., 109, 063111 (2016). DOI: 10.1063/1.4961053
     
  20. (J-170) Tao Jiang,* Xueqiang Zhang,* Suresh Vishwanath,* Xin Mu,* Vasily Kanzyuba, Denis Sokolov, Sylwia Ptasinska,* David B. Go, Huili Grace Xing* and Tengfei Luo*
    Nanoscale, 8, 10993 (2016). * equal contribution DOI: 10.1039/c6nr00979d
     
  21. (J-169) Jun H. Park, Sara Fathipour, Iljo Kwak, Kasra Sardashti, Christopher F. Ahles, Suresh Vishwanath, Huili Grace Xing, Susan K. Fullerton-Shirey, Andrew Kummel and Alan Seabaugh
    ACS Nano, 10, 6888-6896 (2016). DOI: 10.1021/acsnano.6b02648
     
  22. (J-168) Jun H. Park*, Suresh Vishwanath*, Xinyu Liu, Huawei Zhou, Sarah M. Eichfeld, Susan K. Fullerton-Shirley, Joshua A. Robinson, Randall M. Feenstra, Jacek Furdyna, Debdeep Jena, Huili Grace Xing*, and Andrew Kummel*. Scanning tunneling microscopy and spectroscopy of air exposure effects on molecular beam epitaxy grown WSe2 monolayers and bilayers. ACS Nano, (2016). DOI: 10.1021/acsnano.5b07698 
    *equal contribution

  23. (J-167) S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Huili Grace Xing, and Debdeep Jena. Sub-230 nm deep-UV emission from GaN quantum dots in AlN grown by a modified Stranski-Krastanov mode. J. J. Appl. Phys., (2016).

  24. (J-166) S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Huili Grace Xing, and Debdeep Jena. High-quality InN films on GaN using graded InGaN buffers by MB. J. J. Appl. Phys., (2016).

  25. (J-165) Priti Gupta, A.A. Rahman, Shruti Subramanian, Shalini Gupta, Arumugam Thamizhavel, Tatyana Orlova, Sergei Rouminov, Suresh Vishwanath, Vladimir Protasenko, Masihhur R. Laskar, Huili Grace Xing, Debdeep Jena, and Arnab Bhattacharya. Layered transition metal dichalcogenides: promising near lattice-matched substrates for GaN epitax. Scientific Reports, 6:23708 (2016). DOI: 10.1038/srep23708
     

  26. (J-164) Rusen Yan, Sara Arezoomandan, Berardi Sensale-Rodriguez, and Huili Grace Xing. Exceptional terahertz wave modulation in graphene enhanced by frequency selective surfaces. ACS Photonics, online (2016). DOI: 10.1021/acsphotonics.5b00639
     

  27. (J-163) Sining Dong, Xinyu Liu, Xiang Li, Vasily Kanzyuba, Taehee Yoo, Sergei Rouvimov, Suresh Vishwanath, Huili Grace Xing, Debdeep Jena, Margaret Dobrowolska, and Jacek K. Furdyna. Room temperature weak ferromagnetism in Snl-xMnxSe2 2D films grown by molecular beam epitaxy. APL Materials, 4, 032601 (2016). DOI: 10.1063/1.4942637
     

  28. (J-162) Shubhendu Bhardwaj, Berardi Sensale-Rodriguez, Huili Grace Xing, Siddharth Rajan, and John L. Volakis. Resonant tunneling assisted propagation and amplification of plasmons in HEMTs. J. Appl. Phys., 119, 013012 (2016). 
     

  29. (J-161) Suresh Vishwanath, Katrina Magno*, Xinyu Liu, Sergei Rouvimov, Leonardo Basile, Ning Lu, Angelica Azcatl, Robert Wallace, Moon Kim, Juan-Carlos Idrobo, Jacek K. Furdyna, Debdeep Jena, and Huili Grace Xing. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy. J. of Material Research 31(7), (2016). DOI: 10.1557/jmr.2015.374
    *Undergraduate Researcher

  30. (J-160) Kazuki Nomoto, Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Debdeep Jena, and Huili Grace Xing. 1.7 kV GaN-on-GaN p-n diodes with avalanche capability IEEE Electron Device Letters, 37(2), pp. 161 (2016). DOI: 10.1109/LED.20152506638
    Featured by Semiconductor Today

  31. (J-159) Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Kazuki Nomoto, Xiaodong Yan, Yu Cao, Debdeep Jena, and Huili Grace Xing. Ultralow leakage AlGaN/GaN HEMTs on Si with non-alloyed regrown ohmic contacts. IEEE Electron Dev. Lett., 37(1), pp. 16 (2016). DOI: 10.1109/LED.2015.2497252 
    Featured by Semiconductor Today

  32. (J-158) Zongyang Hu, Kazuki Nomoto, Bo Song, Mingda Zhu, Meng Qi, Ming Pan, Xiang Gao, Vladimir Protasenko, Debdeep Jena, and Huili Grace Xing. Near unity ideality factor and SRH lifetime in GaN-on-GaN p-n diodes with avalanche breakdown. Appl. Phys. Lett. 107, 243501 (2015).
    Featured by Applied Physics Letters and Semiconductor Today

  33. (J-157) Meng Qi, Kazuki Nomoto, Mingda Zhu, Zongyang Hu, Yuning Zhao, Vladimir Protasenko, Bo Song, Xiaodong Yan, Guowang Li, Jai Verma, Samuel Bader, Patrick Fay, Debdeep Jena, and Huili Grace Xing. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy. Appl. Phys. Lett. 107, 232101 (2015).
    Featured by Semiconductor-Today

  34. (J-156) Kazuki Nomoto, Kengo Takahashi, Oikawa Takuya, Hiroki Ogawa, Tomoaki Nishimura, Tomoyoshi Mishima, Huili Grace Xing, Tohru Nakamura. Ion implantation into GaN and implanted GaN power transistors. ECS Transactions, 69, 105-112 (2015).
     

  35. (J-155) Xiaodong Yan, Wenjun Li, S.M. Islam, Kasra Pourang, Huili Grace Xing, Patrick Fay, and Debdeep Jena. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions. Appl. Phys. Lett., 107, 163504 (2015).
     

  36. (J-154) Rusen Yan, Sara Fathipour, Yimo Han, Bo Song, Shudong Xiao, Mingda Li, Nan Ma, Vladimir Protasenko, David A. Muller, Debdeep Jena, and Huili Grace Xing, Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters, 15(9), 5791-8, (2015). DOI: 10.1021/acs.nanolett.5b01792
     

  37. (J-153) S. Rahman, Z. Jiang, H.G. Xing, P. Fay, and Lei Liu, Lens-coupled folded-dipole antennas for terahertz detection and imaging. IET Microwaves, Antennas and Propogation, May 20 (2015).
     

  38. M. I. B. Shams, Z. Jiang, S. Rahman, J. Qayyum, H. G. Xing, P. Fay, and Lei LM. I. B. Shams, Z. Jiang, S. Rahman, J. Qayyum, H. G. Xing, P. Fay, and Lei Liu,(J-152) M.I.B. Shams, Z. Jiang, S. Rahman. J. Qayyum, H.G. Xing, P. Fay, and Lei Liu, Characterization of THz Antennas using Photo-Induced Coded Aperture Imaging. Microwave and Optical Technology Letters, vol. 57, no. 5, pp. 1180-1184 (2015).
    al Technology Let57, no. 5, pp. 1180-1184 (2015).

  39. (J-151) Faiza Afroz Faria, Kazuki Nomoto, Zongyang Hu, Sergei Rouvimov, Huili Grace Xing and Debdeep Jena
    Low temperature AlN growth by MBE and its application in HEMTs.
    J. Crystal Growth, (2015).
     

  40. (J-150) Suresh Vishwanath, Xinyu Liu, Sergei Rouvimov, Patrick C. Mende, Angelica Azcatl, Stephen McDonnell, Robert M. Wallace, Randall M. Feenstra, Jacek K. Furdyna, Debdeep Jena and Huili Grace Xing
    Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene J. of 2D materials, 2, 024007 (2015). doi:10.1088/2053-1583/2/2/024007
     

  41. (J-149) Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing and Debdeep Jena
    Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes. Appl. Phys. Lett, 106, 041906 (2015).
     

  42. (J-148) Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Kazuki Nomoto, Xiaodong Yan, Yu Cao, Wayne Johnson, Erhard Kohn, Debdeep Jena, and Huili Grace Xing
    1.9 kV AlGaN/GaN lateral Schottky barrier diodes on silicon. IEEE Electron Dev. Lett. 36 (4), 375-377 (2015). DOI:10.1109/LED.2015.2404309
    Featured by Semiconductor-Today

  43. (J-147)  William A. O'Brien, Meng Qi, Lifan Yan, Chad A. Stephenson, Vladimir Protasenko, Huili Grace Xing, Joanna M. Millunchick and Mark Wistey.
    Self-assembled Ge QDs formed by high-temperature annealing on Al(Ga)As (001). J. of Electronic Materials, 44(5), 1338 (2015).
    Best Paper Award of JEM and EMC 2014

  44. (J-146) Mingda (Oscar) Li, David Esseni, Gregory Snider, Debdeep Jena and Huili Grace Xing. Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFET) IEEE J-EDS, 3(3), 200-207 (2015). DOI:10.1109/JEDS.2015.2390643
     

  45. (J-145) Sara Fathipour, M. Remskar, A. Varlec, A. Ajoy, R. Yan, S. Vishwanath, S. Rouvimov, Wan Sik Hwang,Huili Grace Xing, Debdeep Jena, and Alan Seabaugh. Synthesized multiwall MoS2 nanotube and nanoribbon field effect transistors. Appl. Phys. Lett. 106, 022114 (2015).
     

  46. (J-144) Wan Sik Hwang, Pei Zhao, Kristof Tahy, Luke Nyakiti, Virginia Wheeler, Rachael Myers-Ward, Charles Eddy, D. Kurt Gaskill, Joshua Robinson, Wilfried Haensch, Huili Grace Xing, Alan Seabaugh and Debdeep Jena . Graphene nano ribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates. Appl. Phys. Lett. Mat., 3, 011101 (2015).
     

  47. (J-143) Sara Fathipour, Nan Ma, Wan Sik Hwang, Vladimir Protasenko, Suresh Vishwanath, Huili Grace Xing, Huilong Xu, Debdeep Jena, Joerg Appenzeller, and Alan Seabaugh. Exfoliated multilayer MoTe2 field effect transistors. Appl. Phys. Lett. 105, 192101 (2014).
     

  48. (J-142) Francesca Cavallo, Richard Rojas Delgado, Michelle M. Kelly, Jose R. Sanchez Perez, Daniel P. Schroeder, Huili Grace Xing, Mark A. Eriksson, and Max G. Lagally. Exceptional charge transport properties of graphene on germanium. ACS Nano 8(10), 10237 (2014).
     

  49. (J-141) Y. Zhao, W. Chen, W. Li, M. Zhu, Y. Yue, B. Song, J. Encomendero, B. Sensale-Rodriguez, H. Xing,and P. Fay. Direct electrical observation of plasma waves in GaN-based 2DEGs. Appl. Phys. Lett. 105, 173508 (2014).
     

  50. (J-140) David Esseni, Mingda (Oscar) Li, Gregory Snider, Debdeep Jena and Huili Grace XingChallenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects. ECS Transaction, (2014).
     

  51. (J-139) Debdeep Jena, Kaustav Banerjee, and Grace Huili XingIntimate contacts. Nature Materials, 13, 1076 (Dec. 2014).
     

  52. (J-138) Yuanzheng Yue, Xiaodong Yan, Wenjun Li, Huili Grace Xing, Debdeep Jena and Patrick Fay. Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing. J. Vac. Sci. Tech. B, 32, 061201 (Sept. 2014).
     

  53. (J-137) Satyaki Ganguly, Jai Verma, Huili Grace Xing, and Debdeep Jena. Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts. Appl. Phys. Exp., 7, 105501 (Sept. 2014).
     

  54. (J-136) Andrew Ritchie, Shaylin Eger, Chelsey Wright, Daniel Chelladurai, Cuyler Borrowman, Weine Olovsson, Martin Magnuson, Jai Verma, Debdeep Jena, Huili Grace Xing, Christian Dubuc, and Stephen Urquhart. Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride. Appl. Surface Science, 316, 232-236, (August 2014).
     

  55. (J-135) Pei Zhao, Amit Verma, Jai Verma, Huili Grace Xing, Patrick Fay and Debdeep Jena 
    Heterostructure barrier diodes exploiting polarization-induced delta-doping.
    IEEE Electron Dev. Lett., 35(6), 615, (June 2014).
     

  56. (J-134) Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili Grace Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, and Debdeep Jena 
    High-voltage field effect transistors with wide-bandgap b-Ga2O3 nanomembranes. 
    Appl. Phys. Lett., 104, 203111 (May 2014).
     

  57. (J-133) Guowang Li, Bo Song, Satyaki Ganguly, Mingda Zhu, Ronghua Wang, Xiaodong Yan, Jai Verma, Vladimir Protasenko, Huili Grace Xing and Debdeep Jena 
    Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field effect transistors on AlN.
    Appl. Phys. Lett., 104, 193506, (May 2014).
     

  58. (J-132) M.I.B. Shams, Z. Jiang, S. M. Rahman, J. Qayyum, L.-J. Cheng, H. G. Xing, P. Fay, and L. Liu
    Approaching real-time terahertz imaging with photo-induced coded apertures and compressed sensing.
    Electronic Lett., 50(11), 801-803 (May 2014)
    Cover Story of Electronic Letters

  59. (J-131) A. Kannegulla, Z. Jiang, S. M. Rahman, M.I.B. Shams, P. Fay, H. G. Xing, L.-J. Cheng, and L. Liu
    Coded-aperture imaging using photo-induced reconfigurable aperture arrays for mapping terahertz beams. 
    IEEE Trans. on Terahertz Sci. and Tech., 4(3), 321, (May 2014)
     

  60. (J-130) Meng Qi, Chad A. Stephenson, Vladimir Protasenko, William A. O'Brien, Alexander Mintairov, Huili Grace Xing, Mark A. Wistey. 
    Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects.
    Appl. Phys. Lett. 104, 073113 (2014). arXiv:1311.1448
     

  61. (J-129) Satyaki Ganguly, Bo Song, Wan Sik Hwang, Zongyang Hu, Mingda Zhu, Jai Verma, Huili Grace Xingand Debdeep Jena. 
    AlGaN/GaN HEMTs on Si by MBE with regrown contacts and ft = 153 GHz.
    Phys. Status Solidi C 11 (3-4), 887 (2014).
     

  62. (J-128) Satyaki Ganguly, Jai Verma, Zongyang Hu, Huili Grace Xing and Debdeep Jena. 
    Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment.
    Appl. Phys. Express 7, 034102 (2014).
     

  63. (J-127) Zongyang Hu, Yuanzheng Yue, Mingda Zhu, Bo Song, Satyaki Ganguly, Josh Bergman, Debdeep Jena,Huili Grace Xing 
    Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs.
    Appl. Phys. Express 7, 031002 (2014).
     

  64. (J-126) Mingda (Oscar) Li, David Esseni, Gregory Snider, Debdeep Jena and Huili Grace Xing 
    Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor.
    J. Appl. Phys. 115, 074508 (2014). doi:10.1063/1.4866076, arXiv:1312.2557
     

  65. (J-125) Golnaz Karbasian, Patrick J. Fay, Huili Grace Xing, Alexei O. Orlov and Gregory L. Snider.
    Chemical mechanical planarization of gold 
    J. Vac. Sci. Tech. A 32, 021402 (2014)

  66. (J-124) Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Jia Guo, Zongyang Hu, Yuanzheng Yue, Faiza Faria, Michael Schuette, Andrew Ketterson, Edward Beam, Paul Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena and Huili Grace Xing . 
    Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates.
    IEEE Trans. Electron Devices 61(3), 747-754 (2014)

  67. (J-123) W.A. O'Brien, B. Wu, C. Stephenson, V. Protasenko, C. Arisio, M. Lieberman, H.G. Xing, and M.A. Wistey.. 
    Optimal Oxide passivation of Ge for optoelectronics.
    ECS J. of Solid State Sci. & Tech., 3(8), P273 (2014).

  68. (J-122) Wan Sik Hwang, Kristof Tahy, Pei Zhao, Luke O. Nyakiti, Virginia D. Wheeler, Rachel L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Huili Grace Xing, Alan Seabaugh, and Debdeep Jena
    Electronic transport properties of top-gated epitaxial graphene nano ribbon field-effect transistors on SiC wafers.
    J. of Vac. Sci. & Tech. B, 32, 012202 (Jan. 2014).

  69. (J-121) Jai Verma, Prem Kumar Kandaswamy,Vladimir Protasenko, S.M. Islam, Huili Grace Xing, Debdeep Jena 
    Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures.
    Appl. Phys. Lett. 104, 021105 (Jan. 2014)
    Featured by Semiconductor-Today

  70. (J-120) Rusen Yan, Jeffrey R. Simpson, Simone Bertolazzi, Jacopo Brivio, Michael Watson, Xufei Wu, Andras Kis, Tengfei Luo, Angela R. Hight Walker and Huili Grace Xing
    Thermal conductivity of monolayer MoS2 obtained from temperature-dependent Raman spectroscopy.
    ACS Nano, 8(1), pp. 986-993 (2014).

  71. (J-119) H. Ghassemi, A. Lang, C. Johnson, R. Wang, B. Song, H. G. Xing, and M. L. Taheri 
    Evolution of strain in AlGaN/GaN HEMTs under on state bias.
    J. Appl. Phys. 114 , 064507 (2013).

  72. (J-118) Guowang Li, Ronghua Wang, Bo Song, Jai Verma, Yu Cao, Satyaki Ganguly, Amit Verma, Jia Guo,Huili Grace Xing and Debdeep Jena 
    Polarization-induced GaN-on-insulator E/D mode p-channel heterojunction FETs.
    IEEE Electron Dev. Lett., 34 (7), 852-854 (July 2013).

  73. (J-117) Michael Schuette, Andrew Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao, Shiping Guo, Patrick Fay, Huili Grace Xing , and Paul Saunier. 
    Gate-recessed integrated E/D GaN HEMT technology with fT/fmax > 300 GHz. 
    IEEE Electron Dev. Lett., 34 (6), 741, (June 2013).

  74. (J-116) Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang,Faiza Faria, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Grace Xing
    Ultrascaled InAlN/GaN HEMTs with fT of 400 GHz.
    J. J. Appl. Phys., 52 , 08JN14 (March 2013).

  75. (J-115) Hongyan Shi, Rusen Yan, Simon Bertolazzi, Jacopo Brivio, Bo Gao, Andras Kis, Debdeep Jena, Huili Grace Xing and Libai Huang. 
    Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals.
    ACS Nano, 7 (2), 1072-1080 (Feb. 2013)

  76. (J-114) Nan Sun, Kristof Tahy, Huili Grace Xing , Debdeep Jena, Gerald Arnold and Steven T. Ruggiero. 
    Electrical noise and transport properties of graphene.
    J. of Low Temp. Phys., 172 , 202, (Feb. 2013). DOI 10.1007/s10909-013- 0866-x

  77. (J-113) Berardi Sensale-Rodriguez, Rusen Yan, Lei Liu, Debdeep Jena, and Huili (Grace) Xing 
    Graphene reconfigurable THz optoelectronics.
    Proceedings of IEEE, 101 (7), 1705 (July 2013). DOI:10.1109/JPROC.2013.2250471

  78. (J-112) Ronghua Wang, Guowang Li, Golnaz Karbasian, J ia Guo , Bo Song , Yuanzheng Yue, Zongyang Hu , Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing 
    Quaternary barrier InAlGaN HEMTs with fT/fmax of 230/300 GHz.
    IEEE Electron Dev. Lett., 34 (3), 378-380 (March 2013). 
    Featured by Semiconductor-Today

  79. (J-111) Rusen Yan , Qin Zhang, Oleg A. Kirillov, Wei Li, James Basham, Alex Boosalis, Xuelei Liang, Debdeep Jena, Curt A. Richter, Alan Seabaugh, David J. Gundlach, Huili (Grace) Xing and N. V. Nguyen (both corresponding authors) 
    Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide.
    Appl. Phys. Lett. 102 , 123106 (March 2013). DOI: 10.1063/1.4796169 
    Featured by Advances in Engineering

  80. (J-110) Berardi Sensale-Rodriguez, Patrick Fay, Debdeep Jena, Lei Liu, and Huili (Grace) Xing 
    Power amplification at THz via plasma wave excitation in RTD-gated HEMTs. 
    IEEE Trans. THz Sci. Tech., 3 (2), 200-206 (March 2013).

  81. (J-109) Wan Sik Hwang, Maja Remskar, Rusen Yan, Tom Kosel, Jong Kyung Park, Byung Jin Cho, Wilfried Haensch, Huili Grace Xing, Alan Seabaugh and Debdeep Jena
    Comparative study of chemically synthesized and exfoliated multilayer MoS2 field effect transistors.
    Appl. Phys. Lett., 102, 043116 (Jan. 2013).

  82. (J-108) Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace Xing, Debdeep Jena
    Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
    Appl. Phys. Lett. 102, 041103 (Jan. 2013).

  83. (J-107) Berardi Sensale-Rodriguez, Subrina Rafique, Vladimir Protasenko , Rusen Yan, Mingda Zhu, Debdeep Jena, Lei Liu and Huili Grace Xing
    THz imaging employing graphene modulator arrays.
    Optics Express, 21 (2), 2325-2330 (Feb. 2013). 

  84. (J-106) Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Jai Verma, Guowang Li, Tian Fang , Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Xiang Gao, Shipping Guo, Patrick Fay, Debdeep Jena, Huili (Grace) Xing 
    Delay analysis in Enhancement-mode InAlN/AlN/GaN HEMTs with ft/fmax of 191/240 GHz.
    Solid State Electronics, 80 , 67 (Feb. 2013).

  85. (J-105) Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Huili (Grace) Xing , Alan Seabaugh, Kun Xu, O. A. Kirillov, David J. Gundlach, Curt A. Richter, and N. V. Nguyen 
    A unique photoemission method to measure semiconductor heterojunction band offsets.
    Appl. Phys. Lett., 102 , 012101 (2013).

  86. (J-104) Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan Seabaugh, Huili Grace Xing , John S. Suehle, Curt A. Richter, David J. Gundlach and N. V. Nguyen 
    Direct measurement of intrinsic Dirac point of graphene by cavity enhanced internal photoemission.
    Nano Letters 13 (1), 131-136 (2013). DOI: 10.1021/nl303669w

  87. (J-103) Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Faiza Faria, Zongyang Hu, Yuanzheng Yue,Jai Verma, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, andHuili (Grace) Xing 
    InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax of 260/220 GHz.
    Appl. Phys. Exp., 6 , 016503 (2013). 
    Featured by Semiconductor-Today 
    Featured by APEX SPOTLIGHTs

  88. (J-102) Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Debdeep Jena, Lei Liu and Huili Grace Xing
    Efficient terahertz electro-absorption modulation employing graphene plasmonic structures.
    Appl. Phys. Lett., 101 , 261115, Dec. 28, (2012). DOI: 10.1063/1.4773374

  89. (J-101) Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Debdeep Jena, Huili Xing and Debdeep Jena 
    Polarization effects on gate leakage in InAlN/AlN/GaN high-electron mobility transistors.
    Appl. Phys. Lett., 101 , 253519, (2012).

  90. (J-100) Rusen Yan, Berardi Sensale-Rodriguez, Lei Liu, Debdeep Jena, and Huili (Grace) Xing 
    A new class of electrically tunable metamaterial terahertz modulators.
    Optics Express, 20 (27), pp. 28664-71, (2012).

  91. (J-99) Carsten Pietzka, Guowang Li, M. Alomari, Huili Xing , Debdeep Jena and Erhard Kohn. 
    Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance- voltage measurements.
    J. Appl. Phys. 112 , 074508 (2012).

  92. (J-98) Golnaz Karbasian, Patrick Fay, Huili (Grace) Xing, Debdeep Jena, Alexei Orlov, and Gregory Snider 
    High aspect ratio features in PMGI using electron beam lithography and solvent developers.
    J. Vac. Sci. Technol. B, 30 , 06FI01(2012).

  93. (J-97) Berardi Sensale-Rodriguez, Patrick Fay, Lei Liu, Debdeep Jena, Lei Liu, and Huili (Grace) Xing 
    Enhanced terahertz detection in resonant tunnel diode-gated HEMTs.
    ECS Transactions, 49 , 93-102(2012).

  94. (J-96) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Wei Li, Xuelei Liang, David Gundlach, Vladimir Protasenko, Debdeep Jena, Lei Liu, and Huili (Grace) Xing 
    Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.
    Nano Letters, 12 , 4518 (2012). DOI: 10.1021/nl3016329

  95. (J-95) Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt Richter, Angela R. Hight- Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, Huili (Grace) Xing , David J. Gundlach and N. V. Nguyen 
    Determination of graphene work function and graphene-insulator-graphene band alignment by internal photoemission spectroscopy. 
    Appl. Phys. Lett., 101 , 022105, (2012). DOI: 10.1063/1.4734955 
    Featured by IEEE Spectrum

  96. (J-94) Faiza Faria, Jia Guo, Pei Zhao, Guowang Li, Prem Kumar Kandaswamy, Mark Wistey, Huili (Grace) Xing , and Debdeep Jena, 
    Low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy. 
    Appl. Phys. Lett., 101 , 032109, (2012).

  97. (J-93) Wan-Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo Doo Chae, Pei Zhao, Aniruddha Konar, Huili (Grace) Xing , Alan C. Seabaugh, and Debdeep Jena 
    Transistors with chemically synthesized layered semiconductor WS2 exhibiting 10^5 room temperature modulation and ambipolar behavior. 
    Appl. Phys. Lett., 101 , 013107, (2012).

  98. (J-92) Wan-Sik Hwang, Kristof Tahy, Xuesong Li, Huili (Grace) Xing , Alan C. Seabaugh, Chun Yung Sung, and Debdeep Jena 
    Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene.
    Appl. Phys. Lett., 100 , 203107, (2012).

  99. (J-91) Yuanzheng Yue, Zongyang Hu, Jia Guo , Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang,Faiza Faria, Tian Fang, Bo Song , Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing 
    InAlN/AlN/GaN HEMTs with regrown ohmics and ft of 370 GHz. 
    IEEE Electron Dev. Lett., 33 (7), 988, (2012). 
    Featured by Semiconductor-Today

  100. (J-90) O. Laboutin, Y. Cao, R. Wang , G. Li, D. Jena, H. Xing , C.-F. Lo, L. Liu, S. J. Pearton, F. Ren, and W. Johnson. 
    InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition.
    Appl. Phys. Lett., 100 , 121909, (2012). 
    Featured by Semiconductor-Today

  101. (J-89) Qin Zhang, Guangle Zhou , Huili G. Xing , Alan C. Seabaugh, Kun Xu, Sio Hong, Leg A. Kirilov, Curt A. Richter, N. V. Nguyen 
    Tunnel field-effect transistor heterojuction band alignment by internal photoemission spectroscopy. 
    Appl. Phys. Lett., 100 , 102104-7, (2012).

  102. (J-88) Wan-Sik Hwang, K. Tahy, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K. Gaskill, H. Xing , A.C. Seabaugh and D. Jena 
    Fabrication of top-gated epitaxial graphene nano-ribbon FETs using hydrogen- silsesquioxane (HSQ).
    J. of Vac. Sci. and Technol. B (JVST-B), 30 (3), 03D104, 2012.

  103. (J-87) Berardi Sensale-Rodriguez, Rusen Yan , Michelle Kelly, Tian Fang, Kristof Tahy , Wan Sik Hwang, Debdeep Jena, Lei Liu and Huili (Grace) Xing 
    Broadband graphene THz modulators enabled by intraband transitions.
    Nature Communications, 3 , 780, (2012). doi:10.1038/ncomms1787 
    Featured by NSF at LiveScience

  104. (J-86) T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena , 
    Effect of Optical Phonon Scattering on the Performance of GaN Transistors 
    IEEE Electron Dev. Lett., 33 (5), 709-711, (2012).

  105. (J-85) Guowang Li, Ronghua Wang , Jia Guo, Jai Verma, Zongyang Hu, Yuanzheng Yue, Faiza Faria, Yu Cao, Michelle Kelly, Thomas Kosel, Huili (Grace) Xing , Debdeep Jena 
    Ultra-thin body GaN-on-insulaor quantum well FETs with regrown ohmic contacts.
    IEEE Electron Dev. Lett., 33 (5), 661-663, (2012). 
    Featured by Semiconductor-Today

  106. (J-84) Y. Lu, Guangle Zhou , Rui Li, Wan Sik Hwang, Qin Zhang, Tim Vasen, Tom Kosel, Mark Wistey, Huili (Grace) Xing , Alan C. Seabaugh, Patrick Fay 
    Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned.
    IEEE Electron Dev. Lett., 33 (5), 655-657, (2012).

  107. (J-83) Jia Guo , Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang , Jai Verma, Xiang Gao, Shipping Guo, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena, Huili (Grace) Xing 
    MBE regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 ohm- mm
    IEEE Electron Dev. Lett., 33 (4), 525-7, (2012).

  108. (J-82) Guangle Zhou , Yeqing Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen, Chen Chen, H. Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, and Huili (Grace) Xing 
    InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and 10^6 on/off current ratio.
    IEEE Electron Dev. Lett., 33 (6),782, (2012).

  109. (J-81) Rui Li, Guangle Zhou , Qingmin Liu, Soo Doo Chae, Tim Vasen, Wan Sik Hwang, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing , Alan Seabaugh 
    AlGaSb/InAs tunnel field-effect transistor with on-current of 78 uA/um at 0.5V 
    IEEE Electron Dev. Lett., 33 (3), 363-5, (2012).

  110. (J-80) Rui Li, Yeqing Lu, Soo Doo Chae, Guangle Zhou , Qingmin Liu, Chen Chen, M. Shahriar Rahman, Tim Vasen, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing , Siyuranga Koswatta and Alan Seabaugh 
    InAs/AlGaSb heterojunction tunnel field-effect transistor with tunneling in-line with gate field.
    Physica Status Solidi (c), 9 (2), 389-392, (2012). DOI 10.1002/pssc.201100241.

  111. (J-79) Prasanna Sivasubramani, Tae Joo Park, Bran E. Coss, Antonio Lucero, Jie Huang, Barry Brennan, Yu Cao , Debdeep Jena, Huili (Grace) Xing , Robert M. Wallace, Jiyoung Kim 
    In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates
    Phys. Status Solidi RRL, 6 (1), 22-24, (2012)

  112. (J-78) O. Laboutin, Y. Cao, Ronghua Wang, Guowang Li, Debdeep Jena, Huili Xing, C.-F. Lo, L. Liu, S. J. Pearton, F. Ren, And W. Johnsoin.
    The resurgence of III-N materials development AlInN HEMTs and GaN-on-Si.
    ECS Transcations, 41(8), 301-311, 2011.

  113. (J-77) Kevin Goodman, Vladimir Protasenko, Jai Verma, Tom Kosel, Grace Xing, Debdeep Jena
    Molecular beam epitaxial growth of gallium nitride nanowires on atomic-layer deposited aluminum oxide.
    J. Crystal Growth, 334(1), 113-117, 2011.

  114. (J-76) Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing and Debdeep Jena
    Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
    Appl. Phys. Lett., 99(19), 193504, (2011).

  115. (J-75) Jai Verma, John Simon, Vladamir Protasenko, Tom Kosel, Huili Xing and Debdeep Jena
    N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping
    Appl. Phys. Lett., 99(17), 171104 (2011).

  116. (J-74) Berardi Sensale-Rodriguez, Tian Fang, Rusen Yan, Michelle M. Kelly, Debdeep Jena, Lei Liu and Huili (Grace) Xing
    Unique prospects for graphene-based THz modulators.
    Appl. Phys. Lett., 99, 113104, (2011).

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  117. (J-73) Ronghua Wang, Guowang Li, Jai Verma, Tom Zimmermann, Zongyang Hu, Oleg Laboutin, Yu Cao,Wayne Johnson, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    Si-containing recessed ohmic contacts and 210-GHz quaternary barrier InAlGaN HEMTs.
    Appl. Phys. Express, 4, 096502, (2011). SPOTLIGHTS

    Elevated to Open Access, nominated for the Outstanding Paper Award of JSAP 2012
    (Japan Society of Applied Physics).

  118. (J-72) Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim Vasen, C. Chen, H. Zhu, J. Kuo, Siyuranga Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh, and Huili (Grace) Xing
    Vertical InGaAsInP tunnel FETs with tunneling normal to the gate.
    IEEE Electronic Device Letters, 32, 11, 1516-1518, (2011).

  119. (J-71) Bo Gao, Gregory Hartland, Tian Fang, Michelle Kelly, Debdeep Jena, Huili (Grace) Xing and Libai Huang
    Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscope.
    Nano Letters, 11(8), 3184-3189, (2011).

  120. (J-70) Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
    HIgh field transport and current saturation in 2D graphene.
    Phys. Rev. B, 84(12), 125450, (2011).

  121. (J-69) Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Jerry Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    220 GHz quaternary barrier InAlGAN/AlN/GaN HEMTs.
    IEEE Electron Dev. Lett., 32(9), 1215-1217, (2011).

  122. (J-68) Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Jerry Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    210-GHz InAlN/GaN HEMTs with dielectric-free passivation.
    IEEE Electron Dev. Lett. 32(7), 892-894, 2011.

  123. (J-67) Lei Liu, Jeffrey L. Hesler, Robert M. Weikle, II, Tao Wang, Patrick Fay and Huili (Grace) Xing
    A 570-630 GHz frequency domain terahertz spectroscopy system based on a broadband quasi-optical zero bias Schottky diode detector.
    International Journal of High Speed Electronics and Systems 20(3), 629-638, (2011).

  124. (J-66) Berardi Sensale-Rodriguez, Lei Liu, Ronghua Wang, Debdeep Jena and Huili (Grace) Xing
    FET THz detectors operating in the quantum capacitance limited region.
    International Journal of High Speed Electronics and Systems, 20(3), p. 597-609, (2011).

  125. (J-65) Tom Zimmerman, Yu Cao, Guowang Li, Gregory Snider, Debdeep Jena and Huili (Grace) Xing
    Subcritical barrier AlN/GaN E/D-mode HFETs and inverters.
    Physica Status Solidi (a), 208(7), 1620-1622, (2011).

  126. (J-64) Jia Guo, Yu Cao, Chuanxin Lian, Tom Zimmerman, Guowang Li, Jai Verma, Xiang Gao, Shiping Guo, Mark Wistey, Debdeep Jena and Huili (Grace) Xing
    Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy.
    Physica Status Solidi (a), 208(7), 1617-1619, (2011).

  127. (J-63) Libai Huang, Bo Gao, Gregory Hartland, Michelle Kelly, Huili Xing
    Ultrafast relaxation of hot optical phonons in monolayer and multilayer grapheme on different substrates.
    Journal of Surface Science, 605(17-18), 1657-1661, 2011.

  128. (J-62) Debdeep Jena, John Simon, Kejia Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly,Guowang Li, K. Karda, Vladimir Protasenko, C. Lian, Tom Kosel, Patrick Fay, and Huili Xing
    Polarization engineering in group-III nitride heterostructures: New opportunities for device design.
    Phys. Stat. Solidi., 208(7), 1511-1516, (2011).

  129. (J-61) Kevin Goodman, Vladimir Protasenko, Jai Verma, Thomas H. Kosel, Huili G. Xing and Debdeep Jena
    Green luminescence of InGaN nanowires grown on silicon substrates by MBE.
    J. of Appl. Phys., 109(8), 084336 (2011).

  130. (J-60) Yu Cao, Kejia Wang, Guowang Li, Tom Kosel, Huili Xing, and Debdeep Jena
    MBE growth of high conductivity single and multiple AlN/GaN heterojunctions.
    J.Cryst. Growth, 323(1), 529-533, (2011).

  131. (J-59) Ronghua Wang, Paul Saunier, Yong Tang, Xiang Gao, Shipping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    Enhancement-mode InAlN/AlNGaN HEMTs with 10-12 A/mm leakage current and 1012 ON/OFF  current ratio.
    IEEE Electron Dev. Lett., 32(3), 309, (2011).

  132. (J-58) Guowang Li, Yu Cao, Huili Xing, and Debdeep Jena
    High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers.
    Appl. Phys. Lett., 97, 222110 (2010).

  133. (J-57) Yu Cao, Huili Xing, and Debdeep Jena
    Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors.
    Appl. Phys. Lett., 97, 222116 (2010).

  134. (J-56) Ronghua Wang, Paul Saunier, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili Grace Xing
    Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9 A/mm output current and 800 mS/mm transconductance.
    IEEE Electron Dev. Lett., 31(12), 1383, (2010).

  135. (J-55) Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Patrick Fay, Huili Grace Xing and Debdeep Jena
    Threshold voltage control in Al0.72Ga0.28N/AlN/GaN HEMTs by work function engineering.
    IEEE Electron Dev. Lett., 31(9), 954, (2010).

  136. (J-54) Qin Zhang, Yeqing Lu, Huili Grace Xing, Steve J. Koester and Siyuranga O. Koswatta
    Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons.
    IEEE Electron Dev. Lett., 31(6), 531, (2010).

  137. (J-53) Libai Huang, Gregory Hartland, Li-Qiang Chu, Luxmi, Randall Feenstra, Chaunxin Lian, Kristof Tahy,Debdeep Jena and Huili Grace Xing
    Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene.
    Nano Letter, 10 1308, (2010).

  138. (J-52) Yu Cao, Tom Zimmermann, Huili Grace Xing and Debdeep Jena
    Polarization-engineered removal of buffer leakage for GaN HEMTs.
    Appl. Phys. Lett., 96(4), 042102 (2010).

  139. (J-51) Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili Grace Xing and Debdeep Jena
    Quantum transport in graphene nanoribbons patterned by metal etching mask.
    Appl. Phys. Lett., 96(10), 103109, (2010).

  140. (J-50) John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.
    Science, 327, 60 (2010).

  141. (J-49) John Simon, Ze Zhang, Kevin Goodman, Huili Xing, Tom Kosel, Patrick Fay and Debdeep Jena
    Polarization induced Zener tunnel junctions in wide-band-gap heterostructures.
    Phys. Rev. Lett., 103(2), 026801 (2009).

  142. (J-48) Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena, and Huili Grace Xing
    4-nm AlN barrier all binary HFET with SiNx gate dielectric.
    International Journal of HIgh Speed Electronics and Systems, 19, 153 (2009).

  143. (J-47) Debdeep Jena, Tian Fang, Qin Zhang and Huili Grace Xing
    Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions.
    Appl. Phys. Lett., 93(11), 112106 (2008).

  144. (J-46) Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
    Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering.
    Physical Review B, 78(20), 205403 (2008).

  145. (J-45) Qin Zhang, Tian Fang, Huili Xing, Alan Seabaugh and Debdeep Jena
    Graphene nanoribbon tunnel transistors.
    IEEE Electron Dev. Lett., 29(12), 1344 (2008).

  146. (J-44) Chuanxin Lian, Huili Grace Xing, Yu-Chia Chang and Nick Fichtenbaum
    Electrical transport properties of wafer fused p-GaAs/n-GaN heterojunctions.
    Appl. Phys. Lett., 93(11), (2008).

  147. (J-43) Yanghai Yu, Vladimir Protasenko, Debdeep Jena, Huili (Grace) Xing and Masaru Kuno
    Photocurrent polarization anisotropy of randomly oriented nanowire networks.
    Nano Letter, 8(5), 1352-1357 (2008).

  148. (J-42) Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing and Debdeep Jena
    Very low sheet resistance and Shubnikov-de-Haas oscillations in two dimensional electron gases at ultrathin binary AlN/GaN heterojunctions.
    Appl. Phys. Lett., 92(15), 152112, (2008).

  149. (J-41) David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena and Xuili Xing
    2.3nm barrier AlN/GaN HEMTs with insulated gates.
    Physica Status Solidi (C), 5(6), 2047, (2008).

  150. (J-40) Tom Zimmermann, David Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena and Huili Xing
    AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance.
    IEEE Electron Device Lett., 29(7), 661, (2008).

  151. (J-39) Chuanxin Lian, Huili Grace Xing, Yu-Chi Chang and Nick Fichtenbaum
    The role of doping type in setback layers on wafer fused AlGaAs/GaN HBTs.
    Physica Status Solidi (C), 5(9), 2960, (2008).

  152. (J-38) Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing
    Formation of ohmic contacts to ultrathin AlN/GaN HEMTs.
    Physica Status Solidi (C), 5(6), 2030 (2008).

  153. (J-37) Chuanxin Lian and Huili Grace Xing
    The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs.
    Physica Status Solidi (C), 5(6), 1989, (2008).

  154. (J-36) Amoll Singh, Xiangyang Li, Vladimir Protasenko, Gabor Galantai, Masuru Kuno, Huili (Grace) Xing and Debdeep Jena
    Polarization sensitive photodetectors based on solution-synthesized semiconductor nanowire based quantum-wire solids.
    Nano. Letters, 7(10), 2999, (2007).

  155. (J-35) Huili Xing, David Deen, Yu Cao, Tom Zimmermann, Patrick Fay and Debdeep Jena
    MBE-grown ultra-shallow AlN/GaN HFET technology.
    ECS Transactions, Vol. 11(5), 233, (2007).

  156. (J-34) Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena
    Carrier statistics and quantum capacitance of graphene sheets and ribbons.
    Appl. Phys. Lett., 91(9), 092109, (2007).

  157. (J-33) Chuanxin Lian, Huili Grace Xing, Chad S. Wang, David Brown and Lee McCarthy
    Gain degradation mechanism in wafer fused AlGaAs/GaAs/GaN heterojunction bipolar transistors.
    Appl. Phys. Lett., 91(6), 063502 (2007).

  158. (J-32) Ronghui Zhou, Hsueh-Chia Chang, Vladimir Protasenko, Masaru Kuno, Amol Kumar Singh, Debdeep Jena and Huili Xing 
    CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission.
    J.of Appl. Phys., 101(7), 073704 (2007).

  159. (J-31) Chuanxin Lian, Huili (Grace) Xing, Chad S. Wang, Lee McCarthy and Dave Brown
    DC characteristics of AlGAAs/GaAs/GaAs/GaN HBTs formed by direct wafer fusion.
    IEEE Electron Device Lett., 28(1), 8 (2007).

  160. (J-30) J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing and D. Jena
    Hot phonons in Si-doped GaN.
    Appl. Phys. Lett., 89(20), 202117 (2006).

  161. (J-29) John Simon, Albert Wang, Huili Xing, Debdeep Jena and Siddharth Rajan
    Polarization-induced 3-dimensional electron slabs in graded AlGaN layers.
    MRS Symposium Proceedings, 0892 (2006).

  162. (J-28) Siddharth Rajan, Steven P. DenBaars, Umesh K. Mishra, Huili Xing and Debdeep Jena
    Electron mobility in graded AlGaN alloys.
    Appl. Phys. Lett. 88(4), 042103 (2006).

  163. (J-27) John Simon, Albert (Kejia) Wang, Huili Xing, Siddharth Rajan and Debdeep Jena
    Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering of AlGaN.
    Appl. Phys. Lett., 88(4), 042109 (2006).

  164. (J-26) Chuanxin Lian and Huili (Grace) Xing
    Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy.
    Appl. Phys. Lett., 88(2), 022112 (2006).

  165. (J-24) Huili (Grace) Xing and Umesh K. Mishra
    Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs.
    International Journal of High Speed Electronics, 14(3), 819-824 (2004).

  166. (J-23) D. Buttari, A. Chini, A. Chakraborty, L. McCarthy, Huili Xing, T. Palacios, L. Shen, S. Keller and U. K. Mishra
    Selective dry etching of GaN over AlGAN in BC13/SF6 mixtures.
    International Journal of HIgh Speed Electronics, 14(3), 132-137 (2004).

  167. (J-22) S. McCarthy, N. Q. Zhang, H. Xing, B. Moran, S. DenBaars and U. K. Mishra
    High Voltage AlGaN/GaN heterojunction transistors.
    International Journal of HIgh Speed Electronics and Systems, 14(1), 225-243 (2004).

  168. (J-21) Haijiang Yu, L. McCarthy, Huili Xing, P. Waltereit, L. Shen, S. Keller, S. P. Denbaars, J. S. Speck and U. K. Mishra
    Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing.
    Appl. Phys. Lett., 85(22), 5254 (2004).

  169. (J-20) Arpan Chakraborty, Huili Xing, M. D. Craven, S. Keller, T. Mates, J. S. Speck, S. P. DenBaars and U. K. Mishra
    Nonpolar a-plane p-type GaN and p-n junction diodes.
    J.Appl. Phys. 96(8), 4494-4499 (2004).

  170. (J-19) Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra and Debdeep Jena
    AlGaN/GaN polarization-doped field-effect transistor for microwave power applications.
    Appl. Phys. Lett., 84(9), 1591-1593 (2004).

  171. (J-18) Huili Xing, Y. Dora, A. Chini, S. Heikman, S. Keller and U. K. Mishra
    High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plates.
    IEEE Elec. Dev. Lett., 25(4), 161-163 (2004).

  172. (J-17) Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, Huili Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller and U. K. Mishra
    Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures.
    Appl. Phys. Lett., 83(23), 4779-4781 (2003).

  173. (J-16) H. Xing, P. Chavarkar, S. Keller, S. P. DenBaars and U. K. Mishra
    Very high voltage operation (> 330V) with high current gain of AlGaN/GaN HBTs.
    IEEE Electron Device Lett., 24(3), 141-143 (2003).

  174. (J-15) Sarah Estrada, Andrew Huntington, Andreas Stonas, Huili Xing, Umesh Mishra, Steven DenBaars, Larry Coldren and Evelyn Hu
    n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750 C.
    Appl. Phys. Lett., 83(3), 560-562 (2003).

  175. (J-14) Sarah Estrada, Huili Xing, Andreas Stonas, Andrew Huntington, Umesh Mishra, Steven DenBaars, Larry Coldren and Evelyn Hu
    Water-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor.
    Appl. Phys. Lett., 82(5), 820-822 (2003).

  176. (J-13) H. Xing, D. Jena, M. J. W. Rodwell and U. K. Mishra
    Explanation of anomalously high current gain observed in GaN based bipolar transistors.
    IEEE Electron Device Lett., 24(1), 4-6 (2003).

  177. (J-12) Huili Xing, Daniel S. Green, Haijiang Yu, Tom Mates, Peter Kozodoy, Stacia Keller, Steven P. DenBaars and Umesh K. Mishra
    Memory effect and redistribution of Mg in regrown GaN layers by metalorganic chemical vapor deposition.
    Jpn. J. of Appl. Phys., 42(1), 50-53, (2003).

  178. (J-11) Debdeep Jena, Sten Heikman, Daniel Green, Dario Buttari, Robert Coffie, Huili Xing, Stacia Keller, Steven DenBaars, James Speck, Umesh K. Mishra and Ioulia Smorchkova
    Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys.
    Appl. Phys. Lett., 81(23), 4395-4397, (2002).

  179. (J-10) Kung-Hsuan Lin, Gia-Wei Chern, Shi-Wei Chu, Chi-Kuang Sun, Huili Xing, Yulia Smorchkova, Stacia Keller, Umesh Mishra and Steven P. DenBaars
    Ultrashort hole capture time in Mg-doped GaN thin films.
    Appl. Phys. Lett., 81(21), 3975-3977, (2002).

  180. (J-9) D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, P. Chavarkar, R. Coffie, N.Q. Zhang, S. Heikman, L. Shen, H. Xing, C. Zheng, and U.K. Mishra.
    Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs. IEEE Electron Devices Lett. 23(3), 118-120 (2002).

  181. (J-8) H. Xing, S. Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars and U. K. Mishra
    Gallium nitride based transistors.
    Phys., Condens. Matter., 13(32), 7139-7157 (2001).

  182. (J-7) L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M J. W. Rodwell and U. K. Mishra
    Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors.
    Appl. Phys. Lett., 78(15), 2235-2237 (2001).

  183. (J-6) L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars and U. K. Mishra
    GaN HBT: toward an RF device.
    IEEE Trans. Electron Devices, 48(3), 543-551 (2001).

  184. (J-5) J. B. Limb, H. Xing, B. Moran, L. McCarthy, S. P. DenBaars and U. K. Mishra
    High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage.
    Appl. Phys. Lett., 76(17), 2457-2459 (2000).

  185. (J-4) Peter Kozodoy, Huili Xing, Steven P. DenBaars, Umesh K. Mishra, A. Saxler, R. Perrin, S. Elhamri and W. C. Mitchell
    Heavy doping effects in Mg-doped GaN.
    J. Appl. Phys. 87(4), 1832-1835 (2000).

  186. (J-3) Peter Kozodoy, Yulia P. Smorchkova, Monica Hansen, Huili Xing, Steven P. DenBaars and Umesh K. Mishra
    Polarization-enhanced Mg doping of AlGaN/GaN superlattices.
    Appl. Phys. Lett., 75(16), 2444-2446 (1999).

  187. (J-2) J. B. Limb, L. McCarthy, P. Kozodoy, Huili Xing, J. Ibbetson, Y. Smorchkova, S. P. DenBaars and U. K. Mishra
    AlGaN/GaN HBTs using regrown emitter.
    Electron Lett. 35(19), 1671-1673 (1999).

  188. (J-1) L. Zeng, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, H. Xing and G. S. Cargill, III 
    Defect reduction of ZnxCdyMg1-x-ySe based structures grown on InP by using Zn irradiation of the III-V surface
    J. Vac. Sci. Technol. B, 17(3), 1255 (1999).

Conference Papers

  1. (CP-97) Zongyang Hu, Kazuki Nomoto, Wenshen Li, Liheng Jerry Zhang, Jae-Ho Shin, Nicholas Tanen, Tohru Nakamura, Debdeep Jena and Huili Grace Xing
    Vertical fin Ga2O3 field-effect transistors with on/off ratio >10^9
    IEEE Device Research Conference, University of Notre Dame, June 2017.

  2. (CP-96) Zongyang Hu, Wenshen Li, Kazuki Nomoto, Mingda Zhu, Xiang Gao, Manyam Pilla, Debdeep Jena and Huili Grace Xing
    GaN vertical nanowire and fin power MISFETs
    IEEE Device Research Conference, University of Notre Dame, June 2017.

  3. (CP-95) Hugo O. Condori Quispe, Ashish Chanana, Jimy Encomendero, Mingda Zhu, Ajay Nahata, Debdeep Jena, Huili Grace Xing and Berardi Sensale-Rodriguez
    Experimental demonstration of enhanced terahertz coupling to plasmon in ultra-thin membrane AlGaN/GaN HEMT arrays
    IEEE Device Research Conference, University of Notre Dame, June 2017.

  4. (CP-94) Kazuki Nomoto, Samuel Bader, Kevin Lee, Shyam Bharadwaj, Zongyang Hu, Huili Grace Xing and Debdeep Jena
    Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature
    IEEE Device Research Conference, University of Notre Dame, June 2017

  5. (CP-93) Wenshen Li, Kazuki Nomoto, Kevin Lee, S.M. Islam, Zongyang Hu, Mingda Zhu, Xiang Gao, Manyam Pilla, Debdeep Jena and Huili Grace Xing
    600 V GaN vertical V-trench MOSFET with MBE regrown channel
    IEEE Device Research Conference, University of Notre Dame, June 2017.

  6. (CP-92) H. Turski, R. Yan, A. Chaney, S. Bader, J. Encomendero, Z. Hu, G. Muziol, C. Skierbiszewski, Huili Grace Xing and Debdeep Jena
    S-shaped negative differential resistance in III-nitride blue quantum-well laser diodes grown by plasma-assisted MBE
    IEEE Device Research Conference, University of Notre Dame, June 2017.

  7. (CP-91) Shyam Bharadwaj, S.M. Islam, Kevin Lee, Andrew Devine, Meng Qi, Vladimir Protasenko, Sergei Rouvimov, Huili Grace Xing and Debdeep Jena
    High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE
    IEEE Device Research Conference, University of Notre Dame, June 2017.

  8. (CP-90) Cheng Liu, Yu Kee Ooi, S.M. Islam, Huili Grace Xing, Debdeep Jena and Jing Zhang
    Dominant transverse-electric polarized emission from 298 nm MBE-grown AlM-delta-GaN quantum well ultraviolet light-emitting diodes
    Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041R (February 16, 2017). doi:10.1117/12.2252487

  9. (CP-89) (Invited) Mingda (Oscar) Li*, Rusen Yan*, Debdeep Jena, and Huili Grace Xing
    Two-dimensional Heterojunction Interlayer Tunnel Field Effect Transistor (Thin-TFET): From Theory to Applications
    IEEE International Electron Device Meeting, pp.19.2/1-4, (2016).
    * Equal contributions

  10. (CP-88) (Invited) Mingda (Oscar) Li*, Rusen Yan*, Debdeep Jena, and Huili Grace Xing
    Two-dimensional Heterojunction Interlayer Tunnel Field Effect Transistor (Thin-TFET): From Theory to Applications
    IEEE International Electron Device Meeting, ?, pp.?, (2016)
    *Equal contributions

  11. (CP-87) Mingda Zhu, Bo Song, Zongyang Hu, Kazuki Nomoto, Ming Pan, Xiang Gao, Debdeep Jena and Huili Grace Xing
    Comparing buffer leakage in PolarMOSH on SiC and free-standing GaN substrates
    IEEE Lester Eastman Conference, Lehigh University, August 2016
     
  12. (CP-86) S.M. Islam, Meng Qi, Bo Song, Kazuki Nomoto, Vladimir Protasenko, Jingshan Wang, Sergei Rouvimov, Patrick Fay, Huili Grace Xing and Debdeep Jena
    IEEE Device Research Conference, University of Delaware, June 2016.
     
  13. (CP-85) Mingda (Oscar) Li, Shudong Xiao, Rusen Yan, Suresh Vishwanath, Susan Fullerton-Shirey, Debdeep Jena and Huili Grace Xing
    IEEE Device Research Conference, University of Delaware, June 2016.
     
  14. (CP-84) Bo Song, Amit K. Verma, Kazuki Nomoto, Mingda Zhu, Debdeep Jena and Huili Grace Xing
    IEEE Device Research Conference, University of Delaware, June 2016.
     
  15. (CP-83) Amit Verma, Bo Song, David Meyer, Brian Downey, Virginia Wheeler, Huili Grace Xing and Debdeep Jena
    IEEE Device Research Conference, University of Delaware, June 2016.
     
  16. (CP-82) Alexander Chaney, Meng Qi, S. M. Islam, Huili Grace Xing and Debdeep Jena
    IEEE Device Research Conference, University of Delaware, June 2016.
     
  17. (CP-81) Kazuki Nomoto, Zongyang Hu, Bo Song, Mingda Zhu, Meng Qi, Rusen Yan, Vladimir Protasenko, Eugene Imhoff, Jeff Kuo, N. Kaneda, T. Mishima, T. Nakamura, Debdeep Jena and Huili Grace Xing
    IEEE International Electron Device Meeting, 237, pp.9.7.1, (2015).
     
  18. (CP-80) Shubhendu Bhardwaj, Berardi Sensale-Rodriguez, Huili Grace Xing, John Volakis,
    IEEE Device Research Conference, Ohio State University, June 2015.
     
  19. (CP-79) S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Jai Verma, Huili Grace Xing and Debdeep Jena,
    IEEE Device Research Conference, Ohio State University, June 2015.
     
  20. (CP-78) Meng Qi, Kazuki Nomoto, Mingda Zhu, Zongyang Hu, Yuning Zhao, Bo Song, Guowang Li, Patrick Fay, Huili Grace Xing, and Debdeep Jena,
    IEEE Device Research Conference, Ohio State University, June 2015.
     
  21. (CP-77) (Invited) Huili Grace Xing, Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Kazuki Nomoto and Debdeep Jena,
    IEEE Device Research Conference, Ohio State University, June 2015.
     
  22. (CP-76) Bo Song, Mingda Zhu, Zongyang Hu, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing.
    The 27th Symposium on Power Semiconductor Devices and ICs, HongKong, June 2015.
     
  23. (CP-75) (Invited) Xinyu Liu, Suresh Vishwanath, S. Dong, T. Yoo, D. Jena, Huili Grace Xing, M. Dobrowolska, J. Furdyna.
    Proceedings of IEEE Magnetics Conference, Beijing, May 2015. DOI: 10.1109/INTMAG.
    2015.7156850
     
  24. (CP-74) (Invited) Huili Grace Xing, Rusen Yan, Bo Song, Jimy Encomendero, Debdeep Jena.
    Proceedings of SPIE, Baltimore, April 2015.
     
  25. (CP-73) Jun Ren, Bo Song, Huili Grace Xing, Shuoqi Chen, Andrew Ketterson, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao, Paul Saunier, Patrick Fay
    IEEE Compound Semiconductor Integrated Circuit Symposium (CSICs), La Jolla, Oct. 2014.
    DOI:10.1109/CSICS.2014.6978570
     
  26. (CP-71) Suresh Vishwanath, Sergei Rouvimov, Tatyana Orlova, Xingyu Liu, Jacek K. Furdyna, Debdeep Jena and Huili Grace Xing.
    Microscopy and Microanalysis, vol. 20, Suppl. 3, pp. 164-165, August 2014.
    doi:10.1017/S1431927614002542
     
  27. (CP-72) (Invited) Patrick Fay, Y. Xie, Y. Zhao, Z. Jiang, S. Rahman, Huili Grace Xing, B. Sensale-Rodriguez, and L. Liu.
    Proceedings of SPIE, San Diego, Sept. 2014.
     
  28. (Invited) David Esseni, M. G. Pala, A. Revelant, P. Palestri, L. Selmi, Mingda (Oscar) Li, G. Snider, Debdeep Jena and Huili Grace Xing 
    Challenges and Opportunities in the design of Tunnel FETs: materials, device architectures, and defects.
    The 226th Meeting of ECS, Cancun, Mexico, Oct. 2014.

  29. (CP-70) Bo Song, Mingda Zhu, Zongyang Hu, Erhard Kohn, Debdeep Jena, Huili Grace Xing.
    GaN lateral PolarSJs: polarization-doped super junctions.
    IEEE Device Research Conference, University of Notre Dame, June 2014.

  30. (CP-69) Shudong Xiao, Mingda Li, Alan Seabaugh, Debdeep Jena, Huili Grace Xing.
    Vertical heterojunction of MoS2 and WSe2.
    IEEE Device Research Conference, University of California, Santa Barbara, June 2014.

  31. (CP-68) Mingda (Oscar) Li, David Esseni, Debdeep Jena and Huili Grace Xing.
    Lateral transport in two-dimensional heterostructure interlayer tunneling field effect transistor (Thin-TFET).
    IEEE Device Research Conference, University of California, Santa Barbara, June 2014.

  32. (CP-67) Zongyang Hu, Raj Jana, Meng Qi, Satyaki Ganguly, Bo Song, Erhard Kohn, Debdeep Jena, Huili Grace Xing.
    Characteristics of In0.17Al0.83GaN/AlN/GaN MOS-HEMTs with steeper than 60 mV/dec sub-threshold slopes in deep sub-threshold regions.
    IEEE Device Research Conference, University of California, Santa Barbara, June 2014.

  33. (CP-66) Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, X. Yan, Yu Cao, Erhard Kohn, Debdeep Jena, Huili Grace Xing.
    AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps.
    IEEE Silicon Nanoelectronics Workshop, Hawaii, June 2014.

  34. (CP-65) (Invited) Debdeep Jena, Mingda Li, Nan Ma, Wan Sik Hwang, David Esseni, Alan Seabaugh, and Huili Grace Xing.
    Electron transport in 2D crystal semiconductors and their device applications.
    IEEE Silicon Nanoelectronics Workshop, Hawaii, June 2014.

  35. (CP-64) (Invited) Patrick Fay, Yeqing Lu, Guangle Zhou, Yi Xie, Md. Itrat Bin Shams, Ze Zhang, Huili (Grace) Xing, and Alan C. Seabaugh
    Interband tunneling in InAs/AlGaSb heterostructures: devices for low-power logic and THz applications.
    ISDRS 2013, Bethesda, MD, December 11-13, 2013.

  36. (CP-63) Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Andrew Ketterson, Michael Schuette, Edward Beam, Paul Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena and Huili G. Xing
    Source-drain scaling and its effect on the fringing capacitance for ultra-high speed GaN HEMT.
    ISDRS 2013, Bethesda, MD, December 11-13, 2013.

  37. (CP-62) Mingda Zhu, Xiaodong Yan, Bo Song, Zongyang Hu, Yuning Zhao, Debdeep Jena and Huili Grace Xing
    Off-state drain leakage reduction for InAlN/GaN HEMTs using a HCl and O2-plasma twostep treatment.
    ISDRS 2013, Bethesda, MD, December 11-13, 2013.

  38. (CP-61) Zongyang Hu, Yuanzheng Yue, Mingda Zhu, Bo Song, Satyaki Ganguly, Josh Bergman, Debdeep Jena and Huili Grace Xing
    Impact of CF4 plasma treatment on DC performance of Al2O3/InAlN/GaN MOS-HEMTs.
    ISDRS 2013, Bethesda, MD, December 11-13, 2013.

  39. (CP-60) (Invited) Pei Zhao, W.-S. Hwang, E. Kim, R. Feenstra, G. Gu, J. Kang, K. Banerjee, A. Seabaugh, G. H. Xing and D. Jena
    Novel logic devices based on 2D crystal semiconductors: opportunities and challenges.
    IEEE International Electron Device Meeting (IEDM), Washington DC, December 2013.

  40. (CP-59) Ronghua Wang, Guowang Li, Jia Guo, Bo Song, J. Verma, Zongyang Hu, Yuanzheng Yue, Kazuki Nomoto, Satyaki Ganguly, Sergei Rouvimov, Xiang Gao, Oleg Laboutin, Yu Cao, Wayne Johnson, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    Dispersion-free operation in InAlN-based HEMTs with ultra thin or no passivation.
    IEEE International Electron Device Meeting (IEDM), Washington DC, December 2013.
    Featured by Semiconductor-Today

  41. (CP-58) (Invited) Huili G. Xing, Guangle Zhou, Mingda Li, Yiqing Lu, Rui Li, Mark Wistey, Patrick Fay, Debdeep Jena and Alan C. Seabaugh
    Tunnel FETs with tunneling normal to the gate.
    Berkeley Symposium on Energy Efficient Electronics Systems, University of California, Berkeley, CA, October 28-29, 2013.

  42. (CP-57) (Invited student presentation) Rusen Yan, Subrina Rafique, Lei Liu, Berardi Sensale-Rodriguez, and Huili Grace Xing
    IRMMW-THz, Mainz, Germany, September 2013.
    Near-field enhanced graphene terahertz modulator.
    Runner up for the Best Student Presentation Award.

  43. (CP-56) (Invited) Berardi Sensale-Rodriguez, and Huili Grace Xing
    Terahertz reconfigurable devices using graphene.
    Proceedings of SPIE, San Diego, August 2013.

  44. (CP-55) Pei Zhao, Amit Verma, Jai Verma, Huili Grace Xing, Patrick Fay and Debdeep Jena.
    GaN heterostructure barrier diodes (HBD) with polarization-induced Delta-doping.
    IEEE Device Research Conference, University of Notre Dame, June 2013.

  45. (CP-54) WanSik Hwang, Amit Verma, Vladimir Protasenko, Sergei Rouvimov, Huili Grace Xing, Alan Seabaugh, Wilfred Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Forrnari and Debdeep Jena.
    High-voltage field effect transistors with  wide-bandgap B-Ga2Onanomembranes.
    IEEE Device Research Conference, University of Notre Dame, June 2013.

  46. (CP-53) Zhengping Jiang, Yu He, Guangle Zhou, Tillmann Kubis, Huili Grace Xing, and Gerhard Klimeck.
    Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark.
    IEEE Device Research Conference, University of Notre Dame, June 2013.

  47. (CP-52) S. M. Rahman, Zhenguo Jiang, Yi Xie, Huili Xing, Patrick Fay and Lei Liu
    Terahertz focal plane arrays employing heterostructure backward diodes integrated with folded dipole antennas.
    IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, June 2013.

  48. (CP-51) Pei Zhao, Amit Verma, Jai Verma, Huili Xing and Debdeep Jena
    Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire
    CSManTech, New Orleans, Louisiana, May 2013.

  49. (CP-50) Haojun Zhang, Mingda Zhu, Berardi Sensale-Rodriguez, and Huili Grace Xing
    THz plasmonic absorption in periodically patterned semiconductor ribbons.
    IEEE International Wireless Symposium (IWS), Beijing, March 2013.

  50. (CP-49) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-Quen Tserng, Shiping Guo, Xiang Gao, Patrick Fay, Huili Grace Xing, and Paul Saunier.
    State-of-the-art E/D InAlN/AlN/GaN GaN HEMT technology.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), 2013.

  51. (CP-48) Guangle Zhou, Rui Li, Tim Vasen, Meng Qi, SooDoo Chae, Yeqing Lu, Qin Zhang, H. Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Novel gate-recessed vertical InAs/GaAs TFETs with record high Ion of 180 uA/um at VDS = 0.5V.
    IEEE International Electron Device Meeting (IEDM), San Francisco, December, 2012.

  52. (CP-47) Berardi Sensale-Rodriguez, Yeqing Lu, L. Barboni, F. Silverira, Patrick Fay, Debdeep Jena, Alan Seabaugh, and Huili Grace Xing
    Perspectives of TFETs for low power analog ICs. 
    IEEE Subthreshold Microelectronics Conference, Waltham, MA, October 2012.

  53. (CP-46) (Invited) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Vladimir Protasenko, Debdeep Jena, Lei Liu, and Huili Grace Xing
    IRMMW-THz, Wollongong, Australia, September 2012. 
    Exceptional tenability of THz reflection in graphene structures.

    The Best Student Presentation Award.

  54. (CP-45) Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Michael Schuette, Andrew Ketterson, Edward Beam, Paul Saunier, Shiping Guo, Xiang Gao. Patrick Fay, Debdeep Jena, and Huili Grace Xing.
    Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz.
    Device Research Conference, Penn State University, June 2012.

  55. (CP-44) Guowang Li, Ronghua Wang, Jai Verma, Huili Grace Xing, and Debdeep Jena.
    Ultra-thin body GaN-on-Insulator nFETs and pFETs: towards III-nitride complementary logic.
    Device Research Conference, Penn State University, June 2012.

  56. (CP-43)) Jai Verma, Prem Kumar, Amit Verma, Vladimir Protasenko, Huili Grace Xing, and Debdeep Jena
    Tunnel injection GaN/AlN quantum dot UV LED.
    Device Research Conference, Penn State University, June 2012.

  57. (CP-42) Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo Doo Chae, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
    First demonstration of two-dimensional WS2 transistors exhibiting 10^5 room temperature modulation and ambipolar bahavior.
    Device Research Conference, Penn State University, June 2012.

  58. (CP-41) (Invited) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-Quen Tserng, Shiping Guo, Xiang Gao. Patrick Fay, Grace Xing, Paul Saunier.
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), 2012.

  59. (CP-40) Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Oleg A. Kirillov, Curt A. Richter, Nhan V. Nguyen
    Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy.
    ISDRS 2011, University of Maryland, College Park, MD, December 7-9, 2011

  60. (CP-39) Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Guowang Li, Tian Fang, Paul Saunier, Andrew Ketterson, Michael Schuette, Xiang Gao, Shiping Guo, Yu Cao, Oleg Laboutin, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili (Grace) Xing
    Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fr near 200 GHz.
    ISDRS 2011, University of Maryland, College Park, MD, December 7-9, 2011

  61. Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
    Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  62. (CP-37) Ronghua Wang, Guowang Li, Tian Fang, Oleg Laboutin, Yu Cao, J. W. Johnson, Greg Snider, Patrick Fay, Debdeep Jena, Huili Xing
    Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  63. Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim Vasen, H. Zhu, J. Kuo, S. Koswatta,Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Self-aligned InAs/Al0.45 Ga0.55 Sb vertical tunnel FETs.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  64. (CP-35) Tian Fang, Ronghua Wang, Guowang Li, Huili Xing, S. Rajan, Debdeep Jena
    Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  65. (CP-34) (Invited) Paul Saunier, Andrew Ketterson, Michael Schuette, Tso-Min Chou, Jose Jimenez, Hua-Quen Tserng, Grace Xing, Shiping Guo, Xiang Gao
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.

  66. (CP-33) (Invited) Debdeep Jena, Kristof Tahy, Tian Fang, Pei Zhao, Wan Sik Hwang, Michelle Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, Rui Li, Huili Xing and Alan Seabaugh
    Graphene transistors for digital applications.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.

  67. (CP-32) Guangle Zhou, Yeqing Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen, C. Chen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh and Huili (Grace) Xing
    Self-aligned In0.53 Ga0.47 As/InAs/InP vertical tunnel transistors.
    International Conference on Compound Semiconductor Manufacturing Technology (CSManTech), Palm Springs, April 2011.

  68. (CP-31) Yong Tang, Paul Saunier, Ronghua Wang, Andrew Ketterson, Xiang Gao, Shiping Guo, Gregory Snider, Debdeep Jena, Huili (Grace) Xing and Patrick Fay
    High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications.
    IEEE International Electron Device Meeting, San Francisco, 2010.

  69. (Invited) Debdeep Jena, Kristof Tahy, David Shilling, Qin Zhang, Tom Zimmermann, Patrick Fay, Huili Xing, Alan Seabaugh, Luxmi, Randall Feenstra, Siyuranga Koswatta
    Graphene transistors.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), 2010.

  70. (CP-29) (Invited) L. Liu, T. Wang, A. Biswas, Z. Cai, F. Watanabe, A.S. Biris, Marya Lieberman, Huili Xing and Patrick Fay
    Narrow spectral features of cellulose nanocomposites characterized by a frequency domain terahertz spectroscopy.
    ICCE, 2010.

  71. (CP-28) L. Liu, Berardi Sensale-Rodriguez, Z. Zhang, Tom Zimmermann, Yu Cao, Debdeep Jena, Patrick Fay and Huili Xing
    Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility transistors.
    The 21st International Symposium on Space Terahertz Technology, Oxford, March 2010.

  72. (CP-27) Ronghua Wang, Xiu Xing, Tian Fang, Tom Zimmermann, Chuanxin Lian, Guowang Li, Paul Saunier, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena, Huili (Grace) Xing
    High performance E-mode InAlN/GaN HEMTs: interface states from subthreshold slopes.
    The 68th Device Research Conference, Notre Dame, June 2010.

  73. (CP-26) Q. Zhang, Y. Lu, G. H. Xing, C. A. Richter, S. J. Koester and S. O. Koswatta
    Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities.
    The 68th Device Research Conference, Notre Dame, June 2010.

  74. (CP-25) Kristof Tahy, Margaret Jane Fleming, Barbara Raynal, Vladimir Protasenko, Siyuranga Koswatta, Debdeep Jena, Huili (Grace) Xing and Michelle Kelly
    Device characteristics of single-layer graphene FETs grown on copper.
    The 68th Device Research Conference, Notre Dame, June 2010.

  75. (CP-24) Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Patrick Fay, Huili Xing and Debdeep Jena
    Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs.
    The 68th Device Research Conference, Notre Dame, June 2010.

  76. (CP-23) Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep Jena and Huili Xing
    Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors.
    International Conference on Compound Semiconductor Manufacturing Technology (Portland), April 2010.

  77. (CP-22) Jia Guo, Tom Zimmermann, Debdeep Jena and Huili (Grace) Xing
    Ultra-scaled AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  78. (CP-21) Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  79. (CP-20) Guangle Zhou, Sajid Kabeer, Dana Wheeler, Patrick Fay, Alan Seabaugh and Huili (Grace) Xing
    Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  80. (CP-19) Dana Wheeler, Sajid Kabeer, Yeqing Lu, Tim Vasen, Qin Zhang, Guangle Zhou, Kevin Clark, Haijun Zhu, Yung-Chung Kao, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Fabrication approach for lateral InGaAs tunnel transistors.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  81. (CP-18) Sajid Kabeer, Tim Vasen, Dana Wheeler, Qin Zhang, Siyuranga Koswatta, Haijun Zhu, Kevin Clark, Jenn Ming Kuo, Yung-Chung Kao, Sean Corcoran, Brian Doyle, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Effect of dopant profile on current-voltage characteristics of p+n+ In0.53GaAs tunnel junctions.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  82. (CP-17) Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili (Grace) Xing and Debdeep Jena
    Quantum transport in patterned graphene nanoribbons.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  83. (CP-16) Kristof Tahy, Chuanxin Lian, Huili (Grace) Xing and Debdeep Jena
    Operation regimes of double gated graphene nanoribbon FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  84. (CP-15) Tom Zimmermann, Yu Cao, Jia Guo, Xiangning Luo, Debdeep Jena and Huili Xing
    Top-down AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

  85. (CP-14) Kristof Tahy, David Shilling, Tom Zimmermann, Huili Xing, Patrick Fay, Luxmi, Randall Freenstra and Debdeep Jena
    Gigahertz operation of epitaxial graphene transistors.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

  86. (CP-13) Kristof Tahy, Siyuranga Koswatta, Tian Fang, Qin Zhang, Huili Xing and Debdeep Jena
    High field transport properties of 2D and nanoribbon graphene FETs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

  87. (CP-12) John Simon, Keija Wang, Huili Xing and Debdeep Jena
    Polarization induced graded AlGaN p-n junction grown by MBE.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.

  88. (CP-11) Xiangning Luo, YenChun Lee, Anirudda Konar, Tian Fang, Gregory Snider, Huili Xing and Debdeep Jena
    Current-carrying capacity of long & short channel 2D graphene transistors.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.

  89. (CP-10) Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and Huili Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and ft of ~ 2.6 GHz.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.

  90. (CP-9) Chuanxin Lian and Huili Grace Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain ~ 20 and VBR > 35 V.
    International Conference on Compound Semiconductor Manufacturing Technology, Chicago, (April 2008).

  91. (CP-8) (Invited) Huili Xing, Tom Zimmermann, David Deen, Yu Cao, David Jena and Patrick Fay
    Ultrathin all-binary AlN/GaN based high-performance RF HEMT Technology.
    International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech), Chicago, (April 2008).

  92. (CP-7) Yu Cao, Tom Zimmermann, Huili (Grace) Xing and Debdeep Jena
    Ultrashallow MBE-grown AlN/GaN HEMTs with record high current densities.
    International Semiconductor Device Research Symposium (ISDRS), Washington D.C., (Dec. 2007).
    Nominated for the Best Student Paper Award

  93. (CP-6) A. Singh, A. Khandelwal, X. Li, Huili Xing, M. Kuno, and Debdeep Jena
    Field-effect transistors and photodetectors based on solution-synthesized nanowires.
    Conference Digest of 64th Device Research Conference, Penn Sate University, June 2006.

  94. (CP-5) D. Scott, H. Xing, S. Krishnan, M. Urgeaga, N. Parthasarathy, and M. Rodwell
    InAlAs/InGaAs/InP DHBTs with polycrystalline InAs extrinsic emitter regrowth.
    60th Device Research Conference, Santa Barbara, CA, USA, June 2002.

  95. (CP-4) (Invited) H. Xing, D. S. Green, L. McCarthy, I. P. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. P. DenBaars, J. Speck, and U. K. Mishra
    Progress in gallium nitride-based bipolar transistors.
    BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, September 2001.

  96. (CP-2) (Invited) U. Mishra, R. Vetury, L. McCarthy, Y. Smorchkova, S. Keller, H. Xing, N. Zhang, J. Speck, R. York and S. DenBaars
    AlGaN/GaN HEMTs and HBTs for microwave power
    Conference Digest of 58th Device Research Conference, Denver, CO, USA, June 2000.

  97. (CP-1) H. Xing, L. McCarthy, S. Keller, S. P. DenBaars and U. K. Mishra
    High current gain GaN bipolar junction transistors with regrown emitters.
    27th Int. Symp. on Compound Semi., Monterey, CA, USA, October 2000.

Invited Talks

  1. (I-97) (Keynote) The KAUST-NSF Research Conference on Interactive Electronics, KAUST, January 2017.
    Electronics based on GaN and layered materials
     
  2. (I-96) The Chez Pierre seminar, MIT, Boston, December, 2016.
    SnSe and related layered materials
     
  3. (I-95) The International Electron Device Meeting (IEDM), San Francisco, December, 2016.
    Thin-TFET
     
  4. (I-94) The Steep Transistor Workshop 2016, Lausanne, September, 2016.
    Thin-TFET
     
  5. (I-93) The International Conference on Electronic Materials (ICEM), Singapore, July 4-8, 2016.
    Approaching the theoretical limit of GaN power devices
     
  6. (I-92) The 2nd International Symposium on Physics and Device Applications of Two-Dimensional Materials, Shanghai, June 30, 2016.
    Recent progress on 2D materials
     
  7. (I-91) The 229th ECS annual meeting, San Diego, May 29, 2016.
    Recent progress on GaN power devices with BV > 1200 V
     
  8. (I-90) The IEEE MTT-S International Microwave Symposium, San Francisco, May 27, 2016.
    Beyond graphene electronic devices and their potential for high-frequency applications
     
  9. (I-89) (Plenary) The Brainstorming NSF-AFOSR-ARO Workshop on Reproducible Advanced
    Technologies for Next-Generation Nano/Quantum Devices, April 27, 2016.
    Searching for the genetic code for reproducible nano/quantum devices
     
  10. (I-88) (Keynote) The Pittsburgh Quantum Institute (PQI) annual symposium, April 20, 2016.
    Progress to realize Thin-TFET: a 2D material based tunnel transistor
     
  11. (I-87) The University of South California, March 2016.

  12. (I-86) The MRS Spring meeting, Phoenix, March 28, 2016.
    MBE growth and properties of 2D crystal heterostructures
     
  13. (I-85) The APS Spring meeting, Baltimore, March 14-18, 2016.
    2D crystal heterostructures and growth by molecular beam epitaxy
     
  14. (I-84) Vertical GaN Roadmap Workshop, Davis, CA, January 13-14, 2016.
    Polarization Doping in Vertical GaN Electronics
     
  15. (I-83) India Institute of Technology, New Delhi, Dec. 18, 2015.
    GaN and 2D semiconductors for future electronics
     
  16. (I-82) The Mercer Lecture Series, RPI, Dec. 2015.

  17. (I-81) The AVS annual meeting, San Jose, Oct. 2015.
    Secret ingredients in Thin-TFET: a 2D material based transistor
     
  18. (I-80) The NSF-Advance Seminar Series, Rochester Institute of Technology, Rochester, Oct. 2015.
     
  19. (I-79) The Steep Transistors Workshop, Notre Dame, Oct. 2015.
    Thin-TFET: a 2D material based transistor
     
  20. (I-78) The International Conference on Solid State Devices and Materials (SSDM) 2015, Sapporo, Japan, Sept. 2015.
    THz devices based on 2D electron systems
     
  21. (I-77) The International Conference on Nitride Semiconductors (ICNS) 2015, Beijing, China, Aug. 2015.
    Ultimate GaN vertical transistor: PolarMOS
     
  22. (I-76) The Science and Technology of 2D Materials Workshop, Orlando, August 2015.
    Challenges and opportunities in 2D crystals: graphene and beyond
     
  23. (I-75) The Device Research Conference (DRC) 2015, Columbus, Ohio, June 2015.
    Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
     
  24. (I-74) The US-EU workshop on 2D Layered Materials and Devices, Arlington, VA, April 2015.
    Layered Materials for Electronics
     
  25. (I-73) The SPIE DSS15, Baltimore, April 2015.
    Challenges and opportunities in 2D crystals: graphene and beyond
     
  26. (I-72) The SPIE DSS15, Baltimore, April 2015.
    THz devices based on 2D electron systems
     
  27. (I-71) Temasek Laboratory, Nanyang Technological University, Singapore, April 2015.

  28. (I-70) IEEE International Microwave Symposium, Shenzhen, March 2015.
    2D crystals for wireless communications: challenges and opportunities
     
  29. (I-69) The China International Scientific & Technological Cooperation Week, Shenzhen, December 2014.
    Exploring polarization in GaN for power electronics

  30. (I-68) Nanomodular Materials and Systems by Design (NMSD), Washington, D.C. October 2014.
    Modular materials and nanosystems from 2D materials

  31. L. McCarthy, Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars and U. Mishra
    HBT on LEO GaN.
    Conference Digest of 58th Device Research Conference, Denver, CO, USA, June 2000.

  32. International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Guilin, China, Oct. 2014.
    Challenges and opportunities in MBE growth of 2D crystals

  33. The 4th International Symposium on Graphene Devices (ISGD-4), Seattle, Sept. 2014.
    Challenges and opportunities in MBE growth of 2D crystals

  34. (I-67) The 18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, Sept. 2014.
    Challenges and opportunities in MBE growth of 2D crystals

  35. (I-66) Walter Schottky Institute, Technical University Munich, July 2014.
    Terahertz electronics enabled by 2D electron systems

  36. The 4th International Symposium on Graphene Devices (ISGD-4), Seattle, Sept. 2014.
    Terahertz electronics enabled by 2D electron systems

  37. (I-65) IEEE Summer Topicals Meeting, Functional Meta- and Two-Dimensional Materials (FMTM) Symposium, Montreal, Canada, July 2014.
    Terahertz electronics enabled by 2D electron systems

  38. (I-64) CMOS emerging technologies Research, Grenoble, France, July 2014.
    Tunnel FETs based on III-Vs and 2D crystals

  39. (I-63) Nanjing University, May 2014.
    Resonant tunneling enhanced plasmonic terahertz devices

  40. (I-62) SPIE DSS14 Micro-Nanotechnology Sensors, Systems, and Applications Conference and the Passive and Active Millimeter-Wave Imaging Conference, Baltimore, MD, May 2014. (Delivered by B. Sensale-Rodriguez)
    Resonant tunneling enhanced plasmonic terahertz devices

  41. (I-61) Graphene and Beyond Workshop: from atoms to applications, Penn State University, April 2014.
    GaN electronics

  42. (I-60) Cornell University, March 2014
    GaN electronics

  43. (I-59) Texas Tech University, Feb. 2014
    GaN electronics

  44. (I-58) Arizona State University, Jan. 2014
    GaN, III-Vs and graphene in tomorrow's electronics

  45. (I-57) University of Wisconsin, Madison, Nov. 2013
    GaN, III-Vs and graphene in tomorrow's electronics

  46. (I-56) IEEE International Topical Meeting on Microwave Photonics (MWP13), Alexandra, VA, October 2013. (Delivered by B. Sensale-Rodriguez)
    Graphene for reconfigurable THz devices

  47. (I-55) Berkeley Symposium on Energy Efficient Electronics Systems (E3S), CA, October 2013.
    Tunnel FETs with tunneling normal to the gate

  48. (I-54) Gezhi Forum, School of Physics, Peking University, Beijing, China, October 2013.
    GaN, III-Vs and graphene in tomorrow's electronics

  49. (I-53) Solid State Physics Seminar, School of Physics, Peking University, Beijing, China, October 2013.
    THz electronics enabled by 2D electron systems

  50. (I-52) School of Software and Microelectronics, Peking University, Beijing, China, October 2013.
    Tunnel FETs
    GaN electronics

  51. (I-51) HongKong University of Science and Technology, Oct. 2013
    GaN, III-Vs and graphene in tomorrow's electronics

  52. (I-50) SPIE Active Photonics Materials V, San Diego, August 2013.
    Graphene THz devices

  53. (I-49) Ohio State University, May 2013.
    Tunnel FETs
    GaN electronics

  54. (I-48) Nanoelectronics Workshop, Porto Alegre, Brazil, April 2013.
    Tunnel FETs
    GaN electronics

  55. (I-47) Cornell University, April 2013.
    GaN, III-Vs and 2D crystals in future electronics

  56. (I-46) Physics and Chemistry of Surfaces and Interfaces (PCSI), Hawaii, January 2013.
    Unique optoelectronic properties and applications of Graphene

  57. (I-45) Institute for Terahertz Science and Technology (ITST), Santa Barbara, December 2012.
    THz devices built on 2DEGs.

  58. (I-44) The 3rd International Workshop on Terahertz Nanoscience (TeraNano 3), Hawaii, December 2012.
    Graphene and semiconductor plasmonics for THz technologies

  59. (I-43) American Vacuum Society (AVS) annual meeting, Tampa, FL, October 2012.
    Surfaces and interfaces in vertical tunnel FETs.

  60. (I-42) IWN (International Workshop on Nitride Semiconductors), Hokkaido, October, 2012.
    High speed GaN transistors.

  61. (I-41) Tohoku University, Japan, October 2012.
    Ultra-scaled GaN HEMTs and their reliability challenges.

  62. (I-40) [KEYNOTE] ESREF (European Symposium on Reliability of Electron Devices, Failure Physics and Analysis), Cagliari, Italy, October 2012.
    Ultra-scaled GaN HEMTs and their reliability challenges.

  63. (I-39) IRMMW-THz, Wollongong, Australia, September 2012.
    Exceptional tunability of THz reflection in graphene structures.

  64. (I-38) University of Western Australia, Perth, September 2012.
    GaN, graphene and tunnel transistor

  65. (I-37) University of Minnesota, Minneapolis, September 2012.
    GaN, graphene and tunnel transistor

  66. (I-36) Kopin, Massachusetts, August 2012.
    GaN, graphene and tunnel transistor

  67. (I-35) NIST, Gaithersburg, June 2012.
    GaN, graphene and tunnel transistor

  68. (I-34) Purdue University, May 2012.
    GaN, graphene and tunnel transistor

  69. (I-33) North Carolina State University, May 2012.
    GaN, graphene and tunnel transistor

  70. (I-32) University of California, Santa Barbara, April 2012.
    GaN, graphene and tunnel transistor

  71. (I-31) HRL (Huges Research Laboratory), April 2012.
    GaN, graphene and tunnel transistor

  72. (I-30) Fudan University, Shanghai, March 2012.
    GaN: The 3rd electronic revolution?

  73. (I-29) CSTIC (China Semiconductor Technology International Conference), Shanghai, March 2012.
    GaN: The 3rd electronic revolution?

  74. (I-28) CSTIC (China Semiconductor Technology International Conference), Shanghai, March 2012.
    Tunnel field-effect transistors for low voltage electronics.

  75. (I-27) Nippon Telegraph and Telephone Corporation (NTT), R&D center, Atsugi, Japan, 2011
    GaN HEMT, TFETs and graphene THz modulators.

  76. (I-26) The 9th Topical Workshop on Heterostructure Microelectronics (TWHM), Japan, Aug. 2011
    GaN HEMTs with ultra-thin AlN barriers.

  77. (I-25) ECS annual meeting, Boston, October, 2011
    GaN transistors for power management.

  78. (I-24) The Swiss Federal Institute of Technology Zurich (ETH Zurich), June, 2011
    GaN: the 3rd electronic revolution?

  79. (I-23) University of Michigan, May, 2011
    GaN transistors.

  80. (I-22) Indian Institute of Technology, Madras, December 2010
    GaN transistors.

  81. (I-21) Ohio State University, March, 2010
    AlN/GaN HEMTs.

  82. (I-20) The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, December, 2009
    Top-down AlN/GaN nanoribbon HFETs.

  83. (I-19) Asia-Pacific Workshop on Widegap Semiconductors (APWS), ZhangJiaJie, China, May 2009
    AlN/GaN based HEMTs.

  84. (I-18) Advanced Heterostructure Workshop, Hawaii, 2008
    Ultrashallow AlN/GaN heterostructures for HEMTs.

  85. (I-17) International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech), Chicago, April, 2008
    Ultrathin AlN/GaN heterostructure based HEMTs.

  86. (I-16) Argonne National Laboratory, April, 2008
    Prospects of graphene based electronics.

  87. (I-15) ECS annual meeting, Washington DC, October, 2007
    MBE grown ultrashallow AlN/GaN HEMT technology.

  88. (I-14) Advanced Heterostructure Workshop, Hawaii, 2006
    Ultrashallow AlN/GaN heterostructures for HEMTs.

  89. (I-13) GE Global Research Center, Schenectady, NY, 2006
    The development of GaN-based bipolar transistors.

  90. (I-12) Naval Research Laboratory, Washington DC, 2004
    AlGaN/GaN heterojunction bipolar transistors.

  91. (I-11) University of New Mexico, Albuquerque, New Mexico, 2004
    GaN-based bipolar transistors.

  92. (I-10) Northwestern University, Chicago, 2004
    GaN-based devices and their perspectives.

  93. (I-9) University of Notre Dame, Indiana, 2004 
    GaN-based devices and their perspectives.

  94. (I-8) Rensselaer Polytechnic Institute, Troy, 2004 
    GaN-based devices and their perspectives.

  95. (I-7) University of South Carolina, Columbia, 2003
    GaN-based devices and their perspectives.

  96. (I-5) North Carolina State University, Raleigh, 2003 
    GaN-based devices and their perspectives.

  97. (I-4) University of Wisconsin, Madison, 2003 
    GaN-based devices and their perspectives.

  98. (I-3) Compound Semiconductor (CS) Outlook, Dallas, Texas, 2003
    The growth of III-V nitrides and its effects on devices.

  99. (I-2) BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, Sept. 2001
    Progress in gallium nitride-based bipolar transistors.

  100. (I-1) Nippon Telegraph and Telephone Corporation (NTT), R&D center, Atsugi, Japan, 2001
    AlGaN/GaN heterojunction bipolar transistors with regrown emitter.

Conference Presentations

  1. Conference Presentations are no longer recorded after 2013

  2. (C-182) Rusen Yan, Berardi Sensale-Rodriguez, Lei Liu, Debdeep Jena, and Huili Grace Xing.
    Near-field enhanced graphene terahertz modulators.
    The 3rd International Workshop on Terahertz Nanoscience (TeraNano 3), Hawaii, Dec. 2012.
    (Best Poster Award)

  3. (C-181) (Invited) Berardi Sensale-Rodriguez, Rusen Yan, Huili Grace Xing.
    Reconfigurable THz devices using graphene.
    The 3rd International Workshop on Terahertz Nanoscience (TeraNano 3), Hawaii, Dec. 2012.

  4. (C-180) Guangle Zhou, Rui Li, Tim Vasen, Meng Qi, SooDoo Chae, Yeqing Lu, Qin Zhang, H. Zhu, J. Kuo, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Novel gate-recessed vertical InAs/GaAs TFETs with record high Ion of 180 uA/um at VDS = 0.5V.
    IEEE International Electron Device Meeting (IEDM), San Francisco, December, 2012.

  5. (C-179) Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James Basham, Xuelei Liang, Debdeep Jena, Curt A. Richter, Alan Seabaugh, David J. Gundlach, Huili G. Xing and N. V. Nguyen.
    Graphene as an electrode for directly observing hole injection from silicon to oxide.
    Semiconductor Interface Specialist Conference, San Diego, Dec. 2012.

  6. (C-178) Qin Zhang, Rusen Yan, Oleg A. Kirillov, Kun Xu, Curt A. Richter, Thomas Kosel, Huili G. Xing, Alan Seabaugh, Curt A. Richter, David J. Gundlach and N. V. Nguyen.
    Band offsets of Al2O3 on an InAs/AlGaSb heterojunction measured by internal photoemission.
    Semiconductor Interface Specialist Conference, San Diego, Dec. 2012

  7. (C-177) [Invited, keynote] Huili (Grace) Xing, Debdeep Jena
    Ultra-scaled GaN HEMTs and their reliability challenges.
    ESREF (European Symposium on Reliability of Electron Devices, Failure Physics and Analysis), Cagliari, Italy, October 2012.

  8. (C-176) Berardi Sensale-Rodriguez, Yeqing Lu, L. Barboni, F. Silverira, Patrick Fay, Debdeep Jena, Alan Seabaugh, and Huili Grace Xing
    Perspectives of TFETs for low power analog ICs.
    IEEE Subthreshold Microelectronics Conference, Waltham, MA, October 2012.

  9. (C-175) (Invited) Huili (Grace) Xing, Debdeep Jena
    High speed GaN transistors.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.

  10. (C-174) Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili (Grace) Xing and Debdeep Jena
    Reverse leakage in InAlN/AlN/GaN HEMTs: role of built-in polarization field.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.

  11. (C-173) Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang LiRonghua Wang, Faiza Faria, Bo Song, Xiang Gao, Shipping Guo, Thomas Kosel, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    Ultrascaled InAlN/GaN HEMTs with ft of 400 GHz.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.

  12. (C172) Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Yuanzheng Yue, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz.
    IWN (International Workshop on Nitride Semiconductors), Sapporo, Japan, October, 2012.
    Best Paper Award

  13. (C-171) (Invited) Huili (Grace) Xing, Guangle Zhou, Soo Doo Chae, Y. Lu, Rui Li, Tim Vasen,
    Q. Zhang, J.-M. Kuo, H. Zhu, Patrick Fay, Tom Kosel, Alan Seabaugh, Mark Wistey
    Surfaces and interfaces in vertical tunnel FETs,
    AVS annual meeting, Tampa FL, October 2012.

  14. (C-170) (Invited) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Mingda Zhu, Vladimir
    Protasenko, Debdeep Jena, Lei Liu, and Huili Grace Xing
    IRMMW-THz, Wollongong, Australia, September 2012.
    Exceptional tenability of THz reflection in graphene structures.
    Best Student Presentation Award

  15. (C-169) Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace
    Xing
    , and Debdeep Jena
    GaN/AlN quantum dot UV LEDs utilizing tunnel transport by plasma-assisted molecular beam epitaxy.
    The 17th International Conference on MBEs, Nara, Japan, September 2012.

  16. (C-168) Berardi Sensale-Rodriguez, Patrick Fay, Lei Liu, Debdeep Jena, and Huili Grace Xing
    Enhanced terahertz detection in resonant tunnel diode-gated HEMTs.
    The 27th Symposium on Microelectronics Technology and Devices, Brasilia, Brazil, August 2012.

  17. (C-167) Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt Richard, Angela R. Hight-
    Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, and Huili Grace Xing, David
    Gundlach, and Nhan Van Nguyen
    Investigation of graphene-oxide-semiconductor band alignment by internal photoemission
    spectroscopy.

    International Symposium on Compound Semiconductors, UCSB, August 2012.

  18. (C-166) Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Subrina Rafique, Suresh
    Vishwanath, Wan Sik Hwang, Kristof Tahy, Vladimir Protasenko, Michelle Kelly, Lei Liu,
    Debdeep Jena, and Huili Grace Xing
    THz reconfigurable optoelectronic devices employing graphene.
    International Symposium on Compound Semiconductors, UCSB, August 2012.

  19. (C-165) Wan Sik Hwang, Pei Zhao, Kristof Tahy, Xuesong Li, Chun-Yung Sung, Huili Grace
    Xing,
     Alan C. Seabaugh, and Debdeep Jena
    Ultrathin grapheme nanoribbon transistors on wafer-scale chemical-vapor-deposited
    graphene.

    International Symposium on Compound Semiconductors, UCSB, August 2012.

  20. (C-164) Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko, Amit Verma, Huili Grace
    Xing,
     and Debdeep Jena
    GaN/AlN quantum dot UV LEDs utilizing tunnel transport by plasma-assisted molecular
    beam epitaxy.

    International Symposium on Semiconductor LEDs, Berlin, Germany, July 2012.

  21. (C-163) Berardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, Michelle Kelly, Lei Liu,
    Debdeep Jena, and Huili Grace Xing
    Active THz metamaterials based on self-gated 2DEGs.
    Lester Eastman Conference, Brown University, August 2012.

  22. (C-162) Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Edward Beam, Michael Schuette,
    Andrew Ketterson, Paul Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, and
    Huili Grace Xing
    Gate-recessed E-mode InAlN/AlN/GaN HEMTs with ft/fmax of 225/250 GHz.
    Lester Eastman Conference, Brown University, August 2012.

  23. (C-161) Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li,
    Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Gregory
    Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    InAlN/AlN/GaN HEMTs with regrown ohmics and ft of 370 GHz.
    Electronic Materials Conference, Penn State University, June 2012.

  24. (C-160) Vladimir Protasenko, Jai Verma, Huili Grace Xing, and Debdeep Jena
    Excitonic and free carrier recombination in high indium content InGaN layers grown by
    MBE for photovoltaics.

    Electronic Materials Conference, Penn State University, June 2012.

  25. (C-159) Faiza Faria, Jia Guo, Pei Zhao, Guowang Li, Prem Kandaswamy, Huili Grace Xing, and
    Debdeep Jena
    Study on alloyed ohmic contacts to MBE grown n+GaN with various Si doping
    concentrations.

    Electronic Materials Conference, Penn State University, June 2012.

  26. (C-158) Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Michael Schuette, Andrew
    Ketterson, Edward Beam, Paul Saunier, Shiping Guo, Xiang Gao. Patrick Fay, Debdeep
    Jena, and Huili Grace Xing.
    Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz.
    Device Research Conference, Penn State University, June 2012.

  27. (C-157) Guowang Li, Ronghua Wang, Jai Verma, Huili Grace Xing, and Debdeep Jena.
    Ultra-thin body GaN-on-Insulator nFETs and pFETs: towards III-nitride complementary logic.
    Device Research Conference, Penn State University, June 2012.

  28. (C-156) Jai Verma, Prem Kumar, Amit Verma, Vladimir Protasenko, Huili Grace Xing, and
    Debdeep Jena
    Tunnel injection GaN/AlN quantum dot UV LED.
    Device Research Conference, Penn State University, June 2012

  29. (C-155) Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo
    Doo Chae, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
    First demonstration of two-dimensional WS2 transistors exhibiting 10^5 room temperature
    modulation and ambipolar bahavior.

    Device Research Conference, Penn State University, June 2012.

  30. (C-154) (Invited) Wan Sik Hwang, Kristof Tahy, Pei Zhao, R. Myers-Ward, P. Campbell, C.
    Eddy Jr., K. Gaskill, Alan C. Seabaugh, Huili Grace Xing, and Debdeep Jena
    Wafer-scale graphene nanoribbon transistor technology.
    The 221st ECS Meeting, Seattle, May 2012.

  31. (C-153) Syed M. Rahman, Yi Xie, Zhenguo Jiang, Huili Xing, Patrick Fay and Lei Liu
    The development of terahertz focal-plane array elements using Sb-based heterostructure
    backward diode.

    The 23rd International Symposium on Space Terahertz Technology, Tokyo, April 2012.

  32. (C-152) Nan Sun, Gerald Arnold, Kristof Tahy, Jianchun Zeng, Huili Xing, Debdeep Jena and
    Steven Ruggiero
    Low-frequency noise in graphene FETs
    APS Marching Meeting, March 2012

  33. (C-151) Golnaz Karbasian, Alexei O. Orlov, Patrick J. Fay, Huili Xing, Debdeep Jena and
    Gregory L. Snider
    High aspect ratio features in PMGI using electron beam lithography and solvent developers
    International Conference on electron, ion and photon beam technology and nanofabrication

  34. (C-150) (Invited) Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-
    Quen Tserng, Shiping Guo, Xiang Gao. Patrick Fay, Grace Xing, Paul Saunier.
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference
    (GOMACTech), 2012.

  35. (C-149) (Invited) Huili (Grace) Xing
    GaN: The 3rd electronic revolution?
    CSTIC (China Semiconductor Technology International Conference), Shanghai, March 2012.

  36. (C-148) (Invited) Huili (Grace) Xing
    Tunnel field-effect transistors for low voltage electronics.
    CSTIC (China Semiconductor Technology International Conference) Shanghai, March 2012.

  37. (C-147) (Invited) Huili (Grace) Xing
    Graphene THz modulators.
    WOCSEMMAND (Workshop on Compound Semiconductor Materials and Devices), Nappa Valley, February 2012.

  38. (C-146) Wan-Sik Hwang, Kristof Tahy, Pei Zhao, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K. GAskill, Huili Xing, Alan C. Seabaugh and Debdeep Jena
    Wafer-scale graphene nanoribbons for tunnel FET applications.
    The 19th Korean Conference on Semiconductors (KCS), Korea, February 2012.

  39. Soo Doo Chae, Guangle Zhou, Irere Kwihangana, Rui Li, Yeqing Lu, Qingmin Liu, Tim Vasen, Qin Zhang, Wan-Sik Hwang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing and Alan Seabaugh
    Characterization of Interface Traps in Metal-High k-InAs/GaAs TFTETs.
    IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA 2011.

  40. Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Oleg A. Kirilov, Curt A. Richter, and Nhan V. Nguyen
    Band Alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy.
    ISDRS 2011, College Station, MD, December 2011.

  41. Berardi Sensale-Rodriguez, Jia Guo, Ronghua Wang, Guowang Li, Tian Fang, Paul Saunier, Andrew Ketterson, Michael Schuette, Xiang Gao, Shiping Guo, Yu Cao, Oleg Laboutin, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing
    Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fr near 200 GHz.
    ISDRS 2011, College Station, MD, December 2011.

  42. (Invited) Huili (Grace) Xing, Ronghua Wang, Jia Guo, Guowang Li, Zongyang Hu, Jai Verma, Tom Zimmermann, Tom Kosel, Mark Wistey, Gregory Snider, Patrick Fay, and Debdeep Jena 
    TWHM2011-Xing.
    The 9th Topical Workshop on Heterostructure Microelectronics (TWHM), Japan, August 2011.

  43. (Invited) Huili (Grace) Xing, Ronghua Wang, Jia Guo, Guowang Li, Zongyang, Hu, Jai Verma, Tom Zimmermann, Tom Kosel, Mark Wistey, Gregory Snider, Patrick Fay, and Debdeep Jena
    GaN transistors for power managment.
    ECS Annual Meeting, Boston, October 2011.

  44. (Invited) Oleg Laboutin, Y. Cao, Ronghua Wang, Guowang Li, Debdeep Jena, Huili Xing, C.-F. Lo, L.
    Liu, S. J. Pearton, F. Ren, and W. Johnson
    The resurgence of III-N-materials development: AlInN HEMTs and GaN-on-Si
    ECS Annual Meeting, Boston, October 2011.

  45. (Invited) Alan Seabaugh, Soo Doo Chae, Patrick Fay, Wan Sik Hwang, Tom Kosel, Rui Li, Qingmin Liu, Yeqing Lu, Tim Vasen, Mark Wistey, Huili Xing, Guangle Zhou, Qin Zhang
    III-V Tunnel FETs.
    ECS Annual Meeting, Boston, October 2011.

  46. (Invited) Alan Seabaugh, Soo Doo Chae, Patrick Fay, Wan Sik Hwang, Tom Kosel, Rui Li, Qingmin Liu, Yeqing Lu, Tim Vasen, Mark Wistey, Huili Xing, Guangle Zhou, Qin Zhang, Robert M. Wallace
    Interface traps and low subthreshold swing in III-V tunnel FETS.
    AVS Annual Meeting, 2011.

  47. Jia Guo, Yu Cao, Jai Verma, Xiang Gao, Shiping Guo, Ed Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena and Huili Xing
    MBE regrown non-alloyed ohmics with a regrowth interface contact resistance of 0.05 ohm-mm in InAlN/AlN/GaN high electron mobility transistor.
    9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10-15, 2011.

  48. Jai Verma, Guowang Li, Vladimir Protasenko, Prem Kumar Kandaswamy, Huili Xing, and Debdeep Jena
    Pseudomorphic AlN and high composition AlGaN growth by MBE.
    9th International Conference on Nitride Semiconductors, SEC,Glasgow, July 10-15, 2011.

  49. Kevin Goodman, Vladimir Protasenko, Tom Kosel, Grace Xing, Debdeep Jena
    MBE-grown gallium nitride nanowires on atomic layer deposited aluminum oxide.
    9th International Conference on Nitride Semiconductors, SEC, Glasgow, July 10-15, 2011.

  50. Ronghua Wang, Guowang Li, Jai Verma, Xiang Gao, Shiping Guo, Oleg Labooutin, Yu Cao, J. Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili Xing
    Alloyed ohmic contacts with Si interlayer on AlN-bearing HEMTs and 220-GHz GaN HEMTs.
    9th International Conference on Nitride Semiconductors, SEC, Glasgow, July 10-15, 2011.

  51. Wan Sik Hwang, Kristof Tahy, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, Huili Xing, Alan C. Seabaugh, Debdeep Jena
    Fabrication of top-gated sub-10 nm epitaxial graphene nanoribbon FETs using hydrogen silsesquioxan (HSQ).
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.

  52. Vladimir Protasenko, Jai Verma, Guowang Li, Huili (Grace) Xing, Debdeep Jena
    Optical properties of molecular beam epitaxy grown high in content (~20%) InGaN film emitting in green (540 nm).
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.

  53. Satyaki Ganguly, Jai Verma, Guowang Li, Huili Xing, Debdeep Jena
    ALD Al2O3 thickness-dependent study of AlN/GaN MOS-HEMTs.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.

  54. Jia Guo, Jai Verma, Yu Cao, Xiang Gao, Shiping Guo, Ed Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena, Huili (Grace) Xing.
    MBE regrown ohmic contacts with Rc of 0.15 ohm-mm in InAlN/GaN high electron mobility transistor.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.

  55. Ramya Yeluri, Jing Lu, Xiang Liu, Brian Swenson, Umesh Mishra, Guangle Zhou, Huili Xing
    Interface state density for positive band offset dielectrics (Al2O3, SiO2) on GaN.
    53rd Electronic Materials Conference and Exhibition, University of California-Santa Barbara, June 22-24, 2011.

  56. Guangle Zhou, Yeqing Lu, Rui Li, Tim Vasen, Qingmin Liu, Wan Sik Hwang, Qin Zhang, Haijun Zhu, Jenn Ming Kuo, Siyuranga Koswatta, Mark Wistey, Tom Kosel, Patrick Fay, Alan Seabaugh, Huili Xing.
    Passivation effects of ALD oxides on self-aligned In0.53 Ga0.47 As/InAsInP vertical tunnel FETs.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24, 2011.

  57. Berardi Sensale-Rodriguez, Rusen Yan, Michelle Kelly, Tian Fang, Kristof Tahy, Debdeep Jena, Lei Liu,Huili Grace Xing
    Frequency domain THz characterization of graphene.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA June 22-24, 2011.

  58. Bo Gao, Libai Huang, Gregory Hartland, Michelle Kelly, Huili Xing, Debdeep Jena
    Charge carrier dynamics in graphene: Suspended vs. supported.
    53rd Electronic Materials Conference and Exhibition, University of California, Santa Barbara, CA, June 22-24 2011.

  59. Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
    Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  60. Ronghua Wang, Guowang Li, Tian Fang, Oleg Laboutin, Yu Cao, J. W Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili Xing
    Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  61. Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Tim Vasen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Patrick Fay, Alan Seabaugh, Huili (Grace) Xing
    Self-aligned InAs/Al0.45 Ga0.55 Sb vertical tunnel FETs.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  62. Tian Fang, Ronghua Wang, Guowang Li, Huili Xing, S. Rajan, Debdeep Jena
    Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors.
    Device Research Conference, University of California, Santa Barbara, CA, June 20, 2011.

  63. Kristof Tahy,Wan Sik Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, Huili Xing, Alan C. Seabaugh, Debdeep Jena
    Control of the unintentional doping in epitaxial grapheme FETs.
    Graphene Conference, Bilbao, Spain, 2011.

  64. Nan Sun, Owen Zeng, Kristof Tahy, Wan Sik Hwang, Huili Xing, Debdeep Jena, Gerald Arnold, and Steven T. Ruggiero
    Electrical noise in graphene.
    APS March Meeting, 2011.

  65. (Invited) Paul Saunier, Andrew Ketterson, Michael Schuette, Tso-Min Chou, Jose Jimenez, Hua-Quen Tserng, Grace Xing, Shiping Guo, Xiang Gao
    State-of-the-art E/D GaN technology based on an InAlN/AlN/GaN heterostructure.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.

  66. (Invited) Debdeep Jena, Kristof Tahy, Tian Fang, Pei Zhao, Wan Sik Hwang, Michelle Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, Rui Li, Huili Xing, and Alan Seabaugh
    Graphene transistors for digital applications.
    The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Orlando, 2011.

  67. Guangle Zhou, Y. Lu, Rui Li, Wan Sik Hwang, Qingmin Liu, Qin Zhang, Tim Vasen, C. Chen, H. Zhu, J. Kuo, S. Koswatta, Tom Kosel, Mark Wistey, Alan Seabaugh, and Huili (Grace) Xing
    Self-aligned In0.53 Ga0.47As/InAs/InP vertical tunnel transistors.
    (CSManTech), Palm Springs, April 2011.

  68. (Invited) Huili (Grace) Xing, Ronghua Wang, Jia Guo, Guowang Li, Jai Verma, Tom Zimmermann, Yu Cao, Tom Kosel, Mark Wistey, Gregory Snider, Patrick Fay, Debdeep Jena
    Recent progresses on InAlN/AlN/GaN HEMTs at Notre Dame.
    WOCSEMMAND, Savannah, February, 2011.

  69. Yong Tang, Paul Saunier, Ronghua Wang, Andrew Ketterson, Xiang Gao, Shipping Guo, Gregory Snider, Debdeep Jena, Huili (Grace) Xing and Patrick Fay
    High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications.
    IEEE International Electron Device Meeting, San Francisco, 2010.

  70. Prasana Sivasubramani, TaeJoo Park, Brian E. Coss, Stephen McDonnell, Robert M. Wallace, Jiyoung Kim, Yu Cao, Debdeep Jena, Huili (Grace) Xing
    In-situ XPS and half-cycle studies of atomic layer deposited Al2O3 on group-III nitride substrate for MOS HEMT applications.
    American Vacuum Society 57th International Symposium and Exhibition, Albuquerque, 2010.

  71. Yu Cao, Chuanxin Lian, Guowang Li, Jia Guo, Ronghua Wang, Guangle Zhou, Mark Wistey, Pauy Saunier, Shipping Guo, Huili (Grace) Xing and Debdeep Jena
    MBE-regrown ohmics for metal-polar InAlN/GaN HEMTs.
    International Workshop on Nitride Semiconductors, Tempa, 2010.

  72. Tom Zimmermann, Vladimir Protasenko, Yu Cao, Guowang Li, Huili (Grace) Xing and Debdeep Jena
    Hot electron transport and delay time analysis in isotope mixture 15N/14N AlGaN/GaN HEMT structures.
    International Workshop on Nitride Semiconductors, Tempa, 2010.

  73. Ronghua Wang, Paul Saunier, Yong Tang, Xiang Gao, Shipping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    E-mode InAlN HEMTs with 10-12 A/mm leakage current and 1012 on/off current ratio.
    International Workshop on Nitride Semiconductors, Tempa, 2010.

  74. Huili (Grace) Xing, Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Ronghua Wang, Gregory Snider, Patrick Fay, Debdeep Jena
    MBE grown ultra-thin barrier (AlGa)N/AlN/GaN HEMTs.
    The 16th International Conference on Molecular Beam Epitaxy, Berlin, 2010.

  75. Kristof Tahy, Huili Xing and Debdeep Jena
    Graphene nanoribbon p-n junction channel FETs: Experiment and modeling.
    IEEE Lester Eastman Conference, Troy, NY 2010.

  76. Huili (Grace) Xing, Chuanxin Lian, Zongyang Hu, Shalini Lal, Eric Snow and Umesh K. Mishra
    Wafer fusion enabled heterojunction transistors (WAFEHT).
    IEEE Lester Eastman Conference, Troy, NY 2010.

  77. Berardi Sensale-Rodriguez, Lei Liu, Ronghua Wang, Debdeep Jena and Huili (Grace) Xing
    FET THz detectors operating in the quantum capacitance limited region.
    IEEE Lester Eastman Conference, Tory, NY 2010.

  78. Lei Liu, Jeffrey L. Hesler, Robert M. Weikle, II, Tao Wang, Patrick Fay, Huili (Grace) Xing
    A 570-630 GHz frequency domain terahertz spectroscopy system based on a broadband quasi-optical zero bias Schottky diode detector.
    IEEE Lester Eastman Conference, Troy, NY 2010.

  79. (Invited) L. Liu, T. Wang, A. Biswas Z. Cai, F. Watanabe, A. S. Biris, M. Lieberman, H. Xing and P. Fay
    Narrow spectral features of cellulose nanocomposites characterized by a frequency domain terahertz spectroscopy.
    ICCE, 2010.

  80. L. Liu, B. Sensale-Rodriguez, Z. Zhang, T. Zimmermann, Y. Cao, D. Jena, P. Fay and H. Xing
    Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility transistors.
    The 21st International Symposium on Space Terahertz Technology, Oxford, March 2010.

  81. Zongyang Hu, Chuanxin Lian, Zhen Chen, Yu-Chia Chang and Huili (Grace) Xing
    AlGaAs/GaAs/GaN wafer fused HBTs with Ar implanted extrinsic collectors.
    Electronic Materials Conference (EMC) 2010, University of Notre Dame, June 2010.

  82. Yu Cao, Guowang Li, Ronghua Wang, Tom Zimmermann, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization-engineered low-leakage buffers for nitride HEMTs grown by MBE.
    Electronic Materials Conference (EMC) 2010, University of Notre Dame, June 2010.

  83. Yeqing Lu, Alan Seabaugh, Huili Xing, Tom Kosel, Siyuranga Koswatta, Haijun Zhu, Kevin Clark, Jenn Ming Kuo, Yung-Chung Kao and Patrick Fay
    High temperature transport properties of GaN HEMTs with various heterostructures designs.
    Electronic Materials Conference (EMC) 2010, University of Notre Dame, June 2010.

  84. Vladimir Protasenko, Kevin Goodman, Thomas Kosel, Huili Xing and Debdeep Jena
    Photoluminescence of In-graded InGaN wires grown by molecular beam epitaxy.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  85. Tom Zimmermann, Yu Cao, Guowang Li, Patrick Fay, Gregory Snider, Debdeep Jena and Huili 
    Grace Xing

    PECVD-SiN, Si or Si/Al2O3-capped ed-mode AlN/GaN inverters.
    Electronic Materials Conference (EMC), University of Notre Dame, 2010.

  86. Ronghua Wang, Yu Cao, Guowang Li, Tom Zimmermann, Chuanxin Lian, Xiang Gao, Shipping Guo, Debdeep Jena and Huili Grace Xing
    High temperature transport properties of GaN HEMTs with various heterostructures designs.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  87. Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep Jena and Huili Grace Xing
    Source-drain regrowth by MBE in metal-face AlN/GaN HEMTs.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  88. Michelle Kelly, Kristof Tahy, M. Jane Fleming, Barbara Raynal, Vladimir Protasenko, Debdeep Jena andGrace Xing.
    Fabrication and characterization of graphene materials via CVD on copper based substrates.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  89. Libai Huang, Gregory Hartland, Liqiang Chu, Chuanxin Lian, Kristof Tahy, Debdeep Jena and Huili (Grace) Xing.
    Ultrafast transient absorption studies of carrier dynamics in epitaxial graphenen.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  90. Guowang Li, Yu Cao, Huili Grace Xing and Debdeep Jena
    High Al composition Al0.72 Ga0.28N/AlN/GaN heterostructures with high mobility two-dimensional electron gas.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  91. Guangle Zhou, Haijun Zhu, Paul Pinsukanjana, Yung-Chung Kao, Tom Kosel, Patrick Fay, Mark Wistey, Alan Seabaugh and Huili (Grace) Xing
    Regrown InGaAs tunnel junctions for TFETs.
    Electronic Materials Conference (EMC), University of Notre Dame, June 2010.

  92. Berardi Sensale-Rodriguez, L. Liu, Z. Zhang, Patrick Fay and Huili Xing
    Initial study of microwave and terahertz detectors using AlN/GaN HEMTs.
    Electronic Materials Conference (EMC), University of Notre Dame, 2010.

  93. Ronghua Wang, Xiu Xing, Tian Fang, Tom Zimmermann, Chuanxin Lian, Guowang Li, Paul Saunier, Xiang Gao, Shiping Guo, Gregory Snider, Patrick Fay, Debdeep Jena and Huili (Grace) Xing
    High performance E-mode InAlN/GaN HEMTs: interface states from subthreshold slopes.
    The 68th Device Research Conference, Notre Dame, June 2010.

  94. Qin Zhang, Y. Lu, Grace H. Xing, C. A. Richter, S. J. Koester and Siyuiranga O. Koswatta
    Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities.
    The 68th Device Research Conference, Notre Dame, June 2010.

  95. Kristof Tahy, Margaret Jane Fleming, Barbara Raynal, Vladimir Protasenko, Siyuranga Koswatta, Debdeep Jena, Huili (Grace) Xing and Michelle Kelly
    Device characteristics of single-layer graphene FETs grown on copper.
    The 68th Device Research Conference, Notre Dame, June 2010.

  96. Guowang Li, Tom Zimmermann, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Patrick Fay, Huili Xing and Debdeep Jena
    Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs.
    The 68th Device Research Conference, Notre Dame, June 2010.

  97. (Invited) Debdeep Jena, Kristof Tahy, David Shiling, Qin Zhang, Tom Zimmermann, Patrick Fay, Huili Xing, Alan Seabaugh, Luxmi, Randall Feenstra and Siyu Koswatta
    Graphene transistors.
    Government Microcircuit Applications and Critical Technology Conference (GOMACTech), California, March 2010.

  98. Nan Sun, Kristof Tahy, Debdeep Jena, Huili Xing and Steven Ruggiero
    Au/Graphene/Nb tunnel structures.
    APS March Meeting, Colorado, March 2010.

  99. Huili Grace Xing, Chuanxin Lian and Zongyang Hu
    AlGaAs/GaAs/GaN heterojunction bipolar transistors by wafer fusion.
    IEEE UGIM Symposium, West Lafayette, June 2010.

  100. Chuanxin Lian, Yu Cao, Ronghua Wang, Guowang Li, Tom Zimmermann, Debdeep Jena and Huili Xing
    Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors.
    International Conference on Compound Semiconductor Manufacturing Technology (Portland), April 2010.

  101. Lei Liu, Berardi SensaleRodriguez, Ze Zhang, Tom Zimmermann, Yu Cao, Debdeep Jena, Patrick Fay and Huili Grace Xing
    Development of microwave and THz detectors utilizing AlN/GaN HEMTs.
    International Symposium on Space Terahertz Technology (ISSTT), UK, March 2010.

  102. (Invited) Huili Grace Xing
    Recent progresses on AlN/GaN HEMTs.
    WOCSEMMAND, California, February 2010.

  103. Debdeep Jena, Kristof Tahy, Xiangning Luo, Qin Zhang, Luxmi, Siyuranga Koswatta, Tom Zimmermann, Randall Freenstra, Patrick Fay, Huili Grace Xing and Alan Seabaugh
    Graphene physics and device applications.
    The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, December 2009.

  104. Huili Grace Xing, Tom Zimmermann, Yu Cao, Jia Guo and Debdeep Jena
    Top-down AlN/GaN nanoribbon HFETs.
    The Fifteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, December 2009.

  105. Jia Guo, Tom Zimmermann, Debdeep Jena and Huili (Grace) Xing
    Ultra-scaled AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  106. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  107. Guangle Zhou, Sajid Kabeer, Dana Wheeler, Alan Seabaugh and Huili (Grace) Xing
    Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  108. Dana Wheeler, Sajid Kabeer, Yeqing Lu, Tim Vasen, Qin Zhang, Guangle Zhou, Kevin Clark, Haijun Zhu, Yung-Chung Kao, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Fabrication approach for lateral InGaAs tunnel transistors.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  109. Sajid Kabeer, Tim Vasen, Dana Wheeler, Qin Zhang, Siyuranga Koswatta, Haijun Zhu, Kevin Clark, Jenn Ming Kuo, Yung-Chung Kao, Sean Corcoran, Brian Doyle, Patrick Fay, Tom Kosel, Huili Xing and Alan Seabaugh
    Effect of dopant profile on current-voltage characteristics of p+n+ In0.53GaAs tunnel junctions.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  110. Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili (Grace) Xing and Debdeep Jena
    Quantum transport in patterned graphene nanoribbons.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  111. Kristof Tahy, Chuanxin Lian, Huili (Grace) Xing and Debdeep Jena
    Operation regimes of double gated graphene nanoribbon FETs.
    International Semiconductor Device Research Symposium (ISDRS), Dec. 2009.

  112. Debdeep Jena, Kristof Tahy, Xiangning Luo, Qin Zhang, Luxmi, Siyuranga Koswatta, Tom Zimmermann, Randall Freenstra, Patrick Fay, Huili Xing and Alan Seabaugh
    Graphene transistors.
    Topical Workshop on Heterostructure Microelectronics, Nagano, Japan, August 2009.

  113. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    Study of the buffer leakage in the MBE-grown AlN/GaN HEMT structures on GaN template.
    International Conference on Nitride Semiconductors, Korea, October 2009.

  114. Tom Zimmermann, Yu Cao, Debdeep Jena and Huili (Grace) Xing
    Subcritical barrier enhancement-mode AlN/GaN HEMTs.
    International Conference on Nitride Semiconductors, Korea, October 2009.

  115. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization enhanced p-type conductivity in graded N-face AlGaN slabs.
    International Conference on Nitride Semiconductors, Korea, October 2009.

  116. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization enhanced p-type conductivity in graded N-face AlGaN slabs.
    International Symposium of Compound Semiconductors, Santa Barbara, August 2009.

  117. (Invited) Alan Seabaugh, Debdeep Jena, Tian Fang, Patrick Fay, S. Kabeer, Tom Kosel, Y. Lu, S. Koswatta, Kristof Tahy, Tim Vasen, Dane Wheeler, Huili Xing, Q. Zhang. Guangle Zhou, J. - M. Kuo, P. Pinsukanjana, H. Zhu, and Y. -C. Kao
    Low-subthreshold-swing tunnel transistors
    Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2009

  118. Tom Zimmermann, Yu Cao, Xiangning Luo, Guangle Zhou, Tom Kosel, Debdeep Jena and Huili Xing
    Nanoribbon AlN/GaN HFETs: Toward enhancement mode devices.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  119. Kristof Tahy, Huili Xing and Debdeep Jena
    Discrepancies in calculating mobility in 2D graphene and graphene nanoribbon FETs.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  120. David Shilling, Kristof Tahy, Xiangning Luo, Luxmi, Randall Freenstra, Huili Xing and Debdeep Jena
    High-field characteristics of top-gated epitaxial grapheme field effect transistors.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  121. Tian Fang, Aniruddha Konar, Kristof Tahy, Xiangning Luo, Huili Xing and Debdeep Jena
    Current saturation and high-field transport in graphene.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  122. Amol Singh, Rachel Thompson, Vladimir Protasenko, Ken Kuno, Huili Xing and Debdeep Jena
    Polarization-sensitive two-color detectors and photovoltaic devices by solution-synthesized quantum-wire.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  123. John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena
    Polarization enhanced p-type conductivity in graded N-face AlGaN slabs.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  124. Qingling Hang, Yu Cao, Tom Zimmermann, Debdeep Jena and Huili Xing
    Plasma surface cleaning of ultrathin barrier AlN/GaN heterostructures for device fabrication.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  125. Chuanxin Lian and Huili Xing
    The dominant gain limiting mechanism in wafer-fused AlGaAs/GaAs/GaN HBTs.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  126. Yu Cao, Huili Xing and Debdeep Jena
    Low-sheet-resistance multiple AlN/GaN heterojunctions grown by MBE.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  127. Vladimir Protasenko, Kevin Goodman, Huili Grace Xing and Debdeep Jena
    High efficiency green emission from InGaN wires measured in 4K – 300K range.
    Electronic Materials Conference (EMC), Penn State University, June 2009.

  128. Tom Zimmermann, Yu Cao, Jia Guo, Xiangning Luo, Debdeep Jena and Huili Xing
    Top-down AlN/GaN enhancement- and depletion- mode nanoribbon HEMTs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

  129. Kristof Tahy, David Shilling, Tom Zimmermann, Huili Xing, Patrick Fay, Luxmi, Randall Freenstra and Debdeep Jena
    Gigahertz operation of epitaxial grapheme transistors.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

  130. Kristof Tahy, Siyuiranga Koswatta, Tian Fang, Qin Zhang, Huili Xing and Debdeep Jena
    High field transport properties of 2D and nanoribbon graphene FETs.
    Conference Digest of 67th Device Research Conference, Penn State University, June 2009.

  131. (Invited) Huili Grace Xing, Tom Zimmermann, Yu Cao, Debdeep Jena and Ronghua Wang
    Ohmic contacts to AlN/GaN heterostructures.
    WOCSEMMAND, Florida, 2009.

  132. Huili Grace Xing, Tom Zimmermann, Yu Cao and Debdeep Jena
    Ultrashallow AlN/GaN heterostructures for HEMTs.
    Advanced Heterostructure Workshop, Hawaii, 2008.

  133. Yu Cao, Tom Zimmermann, Huili Xing and Debdeep Jena
    Current density limits in nitride HEMTs: Phonon model vs. velocity saturation model.
    International Workshop on Nitride Semiconductors (IWN), Montreux, October 2008.

  134. Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena and Huili Grace Xing
    AlN barrier all binary GaN HFETs.
    International Workshop on Nitride Semiconductors (IWN), Montreux, October 2008.

  135. Chuanxin Lian and Huili Grace Xing
    Temperature dependence of current gain in wafer-fused AlGaAs/GaAs/GaN HBTs.
    International Workshop on Nitride Semiconductors, Montreux, October 2008.

  136. Luo, Kristof Tahy, Gregory Snider, Huili Xing and Debdeep Jena
    High field characteristics of 2D graphene FETs.
    IEEE Lester Eastman Conference, Delaware, August 2008.

  137. Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena and Huili Grace Xing
    4 nm-AlN-barrier all binary HFET with SiNx gate dielectric.
    IEEE Lester Eastman Conference, Delaware, August 2008.

  138. Chuanxin Lian and Huili Grace Xing
    Optimization of fusion conditions for wafer-fused AlGaAs/GaAs/GaN HBTs.
    Electronic Materials Conference (EMC), UCSB, June 2008.

  139. Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Xing
    How to contact an ultra-shallow 2DEG-channel underneath a few nanometer thin AlN barrier.
    Electronic Materials Conference (EMC), UCSB, June 2008.

  140. John Simon, Keija Wang, Huili Xing and Debdeep Jena
    Polarization induced graded AlGaN p-n junction grown by MBE.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.

  141. Xiangning Luo, YenChun Lee, Anirudda Konar, Tian Fang, Gregory Snider, Huili Xing and Debdeep Jena
    Current-carrying capacity of long and short channel 2D grapheme transistors.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.

  142. Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and Huili Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and ft of ~ 2.6 GHz.
    Conference Digest of 66th Device Research Conference, UCSB, June 2008.

  143. Chuanxin Lian and Huili Grace Xing
    Wafer fused AlGaAs/GaAs/GaN HBTs with current gain ~ 20 and VBR > 35 V.
    International Conference on Compound Semiconductor Manufacturing Technology, Chicago, April 2008.

  144. Huili Grace Xing, Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Patrick Fay
    Ultrathin AlN/GaN heterostructure based HEMTs.
    International Conference on Compound Semiconductor Manufacturing Technology, Chicago, April 2008.

  145. (Invited) Huili Grace Xing and Chuanxin Lian
    Current status of AlGaAs/GaAs/GaN HBTs by wafer fusion.
    WOCSEMMAND, Palm Spring, CA, 2008.

  146. Yu Cao, Tom Zimmermann, David Deen, John Simon, Jeff Bean, Ning Su, Jing Zhang, Patrick Fay, Huili Grace Xing and Debdeep Jena
    Ultrashallow MBE-grown AlN/GaN HEMTs with record high current densities.
    International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 2007 –
    Nominated for the Best Student Paper Award.

  147. Chuanxin Lian and Huili Xing
    Characteristics of AlGaAs/GaAs/GaAs-setback/GaN HBTs by wafer fusion.
    MRS Fall Meeting, Boston, MA, USA, Nov. 2007.

  148. Huili Grace Xing, Yu Cao, David Deen, Tom Zimmermann and Debdeep Jena
    MBE grown ultrashallow AlN/GaN HEMT technology.
    212th ECS (The Electrochemical Society) Meeting, Washington DC, Oct. 2007.

  149. Huili Grace Xing and Chuanxin Lian
    AlGaAs/GaAs/GaN heterojunction bipolar transistors formed b wafer fusion.
    International Symposium of Compound Semiconductors (ISCS), Kyoto, Oct. 2007.

  150. Debdeep Jena, Yu Cao, David Deen, Tom Zimmermann and Huili Grace Xing
    Ultrashallow all binary AlN/GaN heterostructures for ultrafast HEMTs.
    International Symposium of Compound Semiconductors (ISCS), Kyoto, Oct. 2007.

  151. Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing
    MBE grown AlInN and AlInN/GaN FETs.
    International Conference of Nitride Semiconductors (ICNS), Las Vegas, Sept. 2007.

  152. David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena and Huili Grace Xing
    Ultra-shallow channel AlN/GaN FETs for future high-speed and high transconductance applications.
    International Conference of Nitride Semiconductors (ICNS), Las Vegas, Sept. 2007.

  153. Chuanxin Lian and Huili Xing
    The role of setback layers in wafer fused AlGaAs/GaAs /GaN HBTs.
    International Conference of Nitride Semiconductors (ICNS), Las Vegas, Sept. 2007.

  154. Chuanxin Lian and Huili Xing
    Comparative study of as-grown AlGaAs/GaAs HBTs and wafer-fused AlGaAs/GaAs /GaN HBTs.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.

  155. Rachel Thompson, Amol Singh, James Puthussery, Aidong Lan, Vladimir Protasenko, Masaru Kuno, Debdeep Jena and Huili Grace Xing
    Solution-liquid-solid synthesized CdS nanowires aligned by dielectrophoresis for polarization-sensitive photodetection.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.

  156. Rachel Thompson, Amol Singh, James Puthussery, Aidong Lan, Vladimir Protasenko, Masaru Kuno, Debdeep Jena and Huili Grace Xing
    Solution-liquid-solid synthesized CdS nanowires aligned by dielectrophoresis for polarization-sensitive photodetection.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.

  157. Amol Singh, Masaru Kuno, Huili Xing and Debdeep Jena
    Transport properties and applications of quantum-wire solids.
    Electronic Materials Conference (EMC), Notre Dame, June 2007.

  158. Rachel Thompson, Huili Grace Xing, Gabor Galanti, Vladimir Protasenko, Masaru Kuno, Ronghui Zhou, Chia Chang, Amol Singh and Debdeep Jena
    Tunability of dielectrophoretic mobility of semiconductor nanowires and its implications in device design.
    Materials Research Society (MRS) Spring Meeting, San Francisco, USA April 2007.

  159. Huili Grace Xing, David Deen, C. Yu, J. Simon, Debdeep Jena and Patrick Fay
    Ultra-shallow channel AlN/GaN heterojunction FETs.
    Materials Research Society (MRS) Spring Meeting, San Francisco, USA April 2007.

  160. Debdeep Jena, Amol Singh, Vladimir Protasenko, Huili Xing and Masuro Kuno
    Electron transport properties of solution-synthesized semiconducting quantum-wire solids.
    Materials Research Society (MRS) Spring Meeting, San Francisco, April 2007.

  161. Amol Singh, Debdeep Jena, Vladimir Protasenko, Masuro Kuno and Huili Xing
    Polarization-sensitive photodetectors based on solution-synthesized CdSe and CdTe quantum-wire solids.
    Materials Research Society (MRS) Spring Meeting, San Francisco, April 2007.

  162. Chuanxin Lian and Huili Grace Xing
    AlGaAs/GaAs/GaN HBTs by wafer fusion.
    Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) Savannah, GA, USA Feb 2007.

  163. Debdeep Jena, Yu Cao, David Deen and Huili Xing
    Phonon-engineering in III-V nitride HEMTs.
    Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) Savannah, GA, USA, Feb 2007.

  164. Huili Grace Xing
    Ultra-shallow channel AlN/GaN HEMTs.
    Advanced Heterojunction Workshop, Hawaii, USA, Dec. 2006.

  165. John Simon, Huili Xing and Debdeep Jena
    Polarization-induced p-doping in N-face graded AlGaN/GaN p-n junctions.
    Materials Research Society (MRS) Fall Meeting, Boston, USA, Nov-Dec 2006.

  166. Chuanxin Lian and Huili Xing
    DC characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs /GaN HBTs by wafer fusion.
    MRS Fall Meeting, Boston, MA, USA, Nov. 2006.

  167. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno, and D. Jena
    Polarization-sensitive photodetectors based on electric-field aligned nanowires.
    Lester Eastman Conference (LEC) 2006, Cornell University, USA, August 2006.

  168. Huili Xing and Chuanxin Lian
    DC characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs /GaN HBTs by wafer fusion.
    Lester Eastman Conference, Ithaca, NY, USA, August 2006.

  169. A. Singh, X. Li, V. Protasenko, M. Kuno, H. Xing and D. Jena
    Transport properties of solution grown thin film nanowire solids.
    48th Electronic Materials Conference, Pennsylvania State University, PA, USA, June 2006.

  170. Huili Xing, X. Li, A. Singh, M. Kuno and D. Jena
    Photocurrent spectroscopy of solution-synthesized nanowire-based photodetectors.
    48th Electronic Materials Conference, Pennsylvania State University, PA, USA, June 2006.

  171. A Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno and D. Jena
    Field-effect transistors and photodetectors based on solution-synthesized nanowires.
    64th Device Research Conference, Pennsylvania State University, PA, USA, June 2006.

  172. John Simon, Siddharth Rajan, Kejia Wang, Huili Xing and Debdeep Jena
    Polarization-induced 3-dimensional electron slabs in graded AlGaN layers.
    Material Research Society Fall Meeting, Boston, USA, Nov. 2005.

  173. Huili Xing and Chuanxin Lian
    AlGaAs/GaAs/GaN heterojunction bipolar transistors by wafer fusion.
    ONR/MURI (reviews - once every six months since), Santa Barbara, CA, USA, June 2005.

  174. Chuanxin Lian and Huili Xing
    Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy.
    47th Electronic Materials Conference, Santa Barbara, CA, USA, June 2005.

  175. D. Jena, H. Xing, S. Rajan, J. Speck, U. Mishra, A. Link and O. Ambacher
    Polarization-induced electron gases at abrupt and graded III-V nitride heterointerfaces.
    Physics and Chemistry of Surfaces and Interfaces (PCSI-32), Bozeman, January 2005.

  176. J. Simon, D. Jena, A. Chakraborty, H. Xing and U. K. Mishra
    Non-Polar GaN: p-type doping and Ohmic contact technology.
    46th Electronic Materials Conference (EMC), Notre Dame, June 2004.

  177. H. Xing and U. K. Mishra
    Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs.
    Lester Eastman Conference, Troy, NY, USA, August 2004.

  178. J. Xing and U. K. Mishra
    Comprehensive characterization of GaN-based bipolar transistors.
    International Conference on Nitride Semiconductors, Nara, Japan, 2003.

  179. H. Xing and U. K. Mishra
    Comprehensive characterization of GaN-based bipolar transistors.
    APS March Meeting, Austin, USA, March 2003.

  180. H. Xing, P. Chavarkar, D. S. Green, D. Jena, S. Keller, S. P. DenBaars and U. K. Mishra
    High voltage operation (>470 V) of AlGaN/GaN heterojunction bipolar transistors.
    International Workshop on Nitride Semiconductors, Aachen, Germany, July 2002.

  181. H. Xing, P. Chavarkar, S. Keller, S. P. DenBaars and U. K. Mishra
    High breakdown (>300V) AlGaN/ GaN bipolar transistors.
    28th International Symposium on Compound Semiconductor, Tokyo, Japan, October 2001.

  182. H. Xing, D. S. Green, L. McCarthy, I. P. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. P. DenBaars, O.Speck and U. K. Mishra
    Progress in gallium nitride-based bipolar transistors.
    BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, September 2001.

  183. H. Xing, I. P. Smorchkova, T. Mates, S. Keller, S. P. DenBaars and U. K. Mishra
    Redistribution of Mg into sequentially regrown GaN layers by metalorganic chemical vapor deposition.
    43rd Electronic Material Conference, Notre Dame, IN, USA, June 2001.

  184. H. Xing, L. McCarthy, S. Keller, S. P. DenBaars and U. K. Mishra
    High current gain GaN homojunction bipolar transistors.
    27th International Symposium on Compound Semiconductor, Monterey, CA, USA, October 2000.

Patents

  1. (P-1) (issued) Polarization-doped field effect transistors (POLFETs) and materials and methods for making the same.
    US Patent No. 11/241,804, (2005).
    Umesh Mishra, Huili Xing, Debdeep Jena, and Siddarth Rajan

  2. (P-2) (issued) Compositionally graded heterojunction semiconductor device and method of making of the same. 
    US Patent No. 8,835,998, (2014). 
    John Simon, Huili Xing and Debdeep Jena

  3. (P-3) (issued) Low voltage tunnel field-effect transistor (TFET) and the method of making same.
    US Patent No. 8,796,733, (2014).
    Alan Seabaugh, Patrick Fay, Huili Xing, Yeqing Lu, Guangle Zhou, Mark Wistey and Siyuranga Koswatta

  4. (P-4) (issued) Methods and apparatus for terahertz wave amplitude modulation.
    US Patent No. 8,836,446, (2014). 
    Berardi Sensale-Rodriguez, Rusen Yan, Tian Fang, Michelle Kelly, Debdeep Jena, Lei Liu and Huili (Grace) Xing

  5. (P-5) (issued) Polarization doped transistors
    US Patent No. 9,362,389, (2016).
    Huili G. Xing, Debdeep Jena, Kazuki Nomoto, So Song, Zongyang Hu and Mingda Zhu

  6. (P-6) (pending) Two-dimensional heterojunction interlayer tunneling field effect transistors. 
    US Patent Application No. 14/629,222, filed in 2014. 
    Mingda Li, David Esseni, Gregory Snider, Debdeep Jena, and Huili (Grace) Xing

Books

  1. Book chapter:III-V nitride heterojunction bipolar transistors.
    Huili (Grace) Xing, Chuanxin Lian* and John Simon**
    Advanced semiconductor materials and device research - SiC and III Nitrides,
    Edited by Ho-Young Cha, 2010.
    (*Lian, Ph.D. student of Xing’s; and **Simon, Ph.D. student of Prof. D. Jena’s)

  2. Book chapter:Graphene transistors.
    Kristof Tahy**, Tian Fang*, Pei Zhao**, Aniruddha Konar**, Chuanxin Lian*, Huili Xing,
    Michelle Kelly* and Debdeep Jena
    Intechweb, 2010
    (*Co-advisees of Xing’s; and **Advisees of Prof. D. Jena’s)

  3. Book chapter:Nitride LEDs on quantum wells and quantum dots.
    Jai Verma, Amit Verma, Vladimir Protasenko*, S.M. Islam, Huili Xing,
    and Debdeep Jena
    Nitride semiconductor LEDs, Woodhead Publishers, Cambridge 2013.
    (*Co-advisee of Xing’s)

  4. Book chapter:Graphene and 2D crystal tunnel transistors.
    Qin Zhang, Pei Zhao, Nan Ma, Grace (Huili) Xing, and Debdeep Jena
    CMOS and Beyond: Logic Switches for Terascale Integrated Circuits
    Cambridge University Press, Edited by Tsu Jae King and Kelin Kuhn, 2014.

  5. Book chapter:Epitaxy of GaN on Silicon.
    Yu Cao, Oleg Laboutin, Wayne Johnson, Satyaki Ganguly, Grace (Huili) Xing, and Debdeep Jena
    Thin Films on Si: Electronic and Photonic Applications
    Series of "Materials and Energy"
    World Scientific Publishing, Edited by Vijay Narayanan, Martin M. Frank and Alex Demkov, 2014.

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